Milpitas, CA, March 12, 2018 – Renesas Electronics Corporation (TSE: 6723), a premier supplier of advanced semiconductor solutions, today announced the RV2X6376A Series of directly modulated laser (DML) diodes. The DML diodes deliver 25 Gbps x four wavelengths as the light source in 100 Gbps optical transceivers that enable high-speed communications inside 4.9G and 5G LTE base stations, and between data center routers and servers. The RV2X6376A Series are the industry’s first DML diodes that support full 25 Gbps speed (per individual laser) and industrial temperature (-40°C to 95°C) without cooling.

The RV2X6376A Series are designed into compact 100 Gbps QSFP28 optical transceiver modules that use conventional NRZ modulation. They are compatible with the Coarse Wavelength Division Multiplexing (CWDM4) standard that specifies four lanes of 25 Gbps optically multiplexed onto and demultiplexed from duplex single mode fiber. The RV2X6376A Series extend the laser diodes family, joining the proven, commercial temperature grade (-5°C to 75°C) NX6375AA Series used in data centers. In addition to providing the ruggedness and reliability base stations require, the RV2X6376A Series also offers data center customers an upgrade to the wider industrial temperature range when additional margin is needed.

Mobile communications and the Internet of Things (IoT) are driving high-speed optical communication systems, which are experiencing rapid growth due to an explosion of data usage. The Cisco® Visual Networking Index (VNI) forecasts global mobile data traffic to grow 44 percent annually from 11,000 Petabytes/month in 2017 to 48,000 Petabytes/month in 2021. To service this hyper-growth, base station manufacturers are transitioning to interim 4.9G and higher throughput, low-latency 5G technology.

“The RV2X6376A Series offers manufacturers the highest reliability solution for rugged outdoor 4.9G and 5G base station applications,” said Diwakar Vishakhadatta, Vice President for High-Speed Optical Communications and Wireless Products at Renesas Electronics Corporation. “The bare die diodes’ wide temperature range and DML technology allow transceiver designers to achieve significantly lower systems cost than current designs using EML diodes.”

Key Features of the RV2X6376A Series

。1.3um AlGaInAs Direct Modulated DFB laser diode

。Uncooled operation (absolute maximum ratings): Tc=-40℃ - +95℃

。Output power: Po=7mW @ 25℃

。SMSR: 35dB min

。Laser operating current: 55mA max

Availability

Samples of the bare die RV2X6376A 25 Gbps laser diodes are available now and mass production starts today. 

Part Number	Channel Number	Peak Emission Wavelength
RV2X6376ACCWT-AAY270	Channel 0	1270nm Lane
RV2X6376ACCWT-AAY290	Channel 1	1290nm Lane
RV2X6376ACCWT-AAY310	Channel 2	1310nm Lane
RV2X6376ACCWT-AAY330	Channel 3	1330nm Lane

source：http://am.renesas.com/