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40 V, 60 V N-ch power MOSFETs in U-MOSIX-H series, newly using the DPAK package

2017-08-29 | Return

“TK3R1P04PL”, “TK4R4P06PL” and “TK6R7P06PL” are N channel power MOSFETs in U-MOSIX-H series, newly using DPAK package. One 40 V product and two 60 V products have been launched.

Each of the new products uses the DPAK package, the latest generation U-MOSIX-H process with a trench structure, and expands the product lineup. Supporting 4.5 V logic level driving, they are suitable for applications such as quick chargers, switching power supplies, and DC-DC converters for servers and communication infrastructures.

Features

>Industry-leading low On-resistance[1]:
RDS(ON)=3.1 mΩ (max) @VGS=10 V (TK3R1P04PL)

>Low output charge

>Supports logic level driving (4.5 V)

Applications

>Efficient DC-DC converters

>Efficient AC-DC converters

>Power supplies

>Motor drives

Product Specifications

(Unless otherwise specified, @Ta=25°C)

Part number	Polarity	Absolute maximum ratings		Drain-source On-resistance R_DS(ON) max (mΩ)		Total gate charge Q_g typ. (nC)	Output charge Q_oss typ. (nC)	Input capacitance C_iss typ. (pF)	Package	Series
		Drain- source voltage V_DSS (V)	Drain current (DC) I_D @T_C=25°C (A)	@V_GS =10 V	@V_GS =4.5 V
TK3R1P04PL	N-ch	40	58	3.1	4.3	60	42	4670	DPAK	U-MOSIX-H
TK4R4P06PL		60	58	4.4	7.1	48.2	39	3280
TK6R7P06PL			46	6.7	11.1	26	23	1990

Note:

[1] As of June 2017, from a survey by Toshiba.

Internal Circuit

Application Circuit Example

The application circuits shown in this document are provided for reference purposes only. Thorough evaluation is required, especially at the mass-production design stage. Toshiba Electronic Devices & Storage Corporation does not grant any license to any industrial property rights by providing these examples of application circuits.

Source：http://www.semicon.toshiba.co.jp/eng/