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Toshiba Launches 600V/650V Super Junction N-Channel Power MOSFETs with Improved EMI Performance

2017-02-01 | Return
TOKYO—Toshiba Corporation’s (TOKYO: 6502) Storage & Electronic Devices Solutions Company today announced the launch of 600V/650V super junction N-channel power MOSFETs with improved EMI performance for use in industrial and office equipment. The new “DTMOS V series” will start with a line-up of twelve products. Sample shipments start today with mass production shipments scheduled for the middle of March.

The new series maintains the same level of low on-resistance and high speed switching performance of Toshiba’s current “DTMOS IV series,” while an optimized design process improves EMI performance by approximately 3 to 5dB[1]. Also, reducing the on-resistance per area (RON x A) performance made it possible to add a new 650V 0.29Ω product into the DPAK package line-up. Products in the new series are suited for use in power supplies for industrial and office equipment that require high efficiency and compact size, adaptors and chargers for notebook PCs and mobile devices, and PCs and printers.

Line-up and Main Specifications of New MOSFETs

Part Number

Package

Absolute Maximum Rating

RDS(ON)
MAX.
(Ω)
@VGS=10V

Qg Typ.
(nC)
@VDD=400V
VGS=10V
ID=Maximum Rating

Ciss Typ.
(pF)
@VDS=300V
VGS=0V
f=100kHz

VDSS (V)

ID (A)

TK290A60Y

TO-220SIS

600

11.5

0.29

25

730

TK380A60Y

TO-220SIS

600

9.7

0.38

20

590

TK560A60Y

TO-220SIS

600

7.0

0.56

14.5

380

TK290P60Y

DPAK

600

11.5

0.29

25

730

TK380P60Y

DPAK

600

9.7

0.38

20

590

TK560P60Y

DPAK

600

7.0

0.56

14.5

380

TK290A65Y

TO-220SIS

650

11.5

0.29

25

730

TK380A65Y

TO-220SIS

650

9.7

0.38

20

590

TK560A65Y

TO-220SIS

650

7.0

0.56

14.5

380

TK290P65Y

DPAK

650

11.5

0.29

25

730

TK380P65Y

DPAK

650

9.7

0.38

20

590

TK560P65Y

DPAK

650

7.0

0.56

14.5

380


Notes

[1] At 150 to 210MHz by using Toshiba evaluation boards. Toshiba survey.

Source:http://www.semicon.toshiba.co.jp/eng/