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SiC SBDs of 650 V/12 A contributing to power saving and high efficiency of power supply PFCs : TRS12A65F, TRS12E65F

2020-05-26 | Return

Toshiba Electronic Devices & Storage Corporation has launched 650 V/12 A Schottky Barrier Diodes (SBDs) "TRS12A65F" and "TRS12E65F" using silicone carbide (SiC), whiclh is a new material that enables power saving and high-efficiency of power supply PFCs. There are two types of packages, TRS12A65F uses isolation type TO-220F-2L and TRS12E65F uses non-isolation type TO-220-2L. Products with 12 A forward current are newly available to cope with the increase in power consumption of equipment.

The new products use second-generation improved JBS (Junction Barrier controlled Schottky) architecture, which reduces the figure of merit (VF・Qcj[1]) to approximately 67 %[2] over the first-generation for higher non-repetitive peak forward surge current of maximum 97 A[3], and lower forward voltage of typical 1.45 V. Because of these matters, new products are less breakable and have low power dissipation. And, by their high voltage and low power dissipation, the new SiC SBD products can operate under higher voltage or higher current than existing Si FRD[4] products that use same size package. The new products increase efficiency and margin of thermal design by decrements of heat dissipation which derives from their low power dissipation.

Toshiba will expand lineup in the future and contribute to higher efficiency and downsizing of communications equipment, servers, inverters, and other products.

Notes:
[1] Qcj : Total charges between 0.1 V and 400 V of inverse voltage of junction capacitance calculated from Cj-VR curve (as of November 2019)
[2] Comparison with TRS12E65C
[3] Case of TRS12E65F
[4] FRD (Fast Recovery Diode)

Features
> High non-repetitive peak forward surge current :
   IFSM=92 A (TRS12A65F)
   IFSM=97 A (TRS12E65F)
> Low reverse current : IR=0.6 μA (typ.)
> Two types of packages :
   Isolation type TO-220F-2L package (TRS12A65F)
   Non-isolation type TO-220-2L package (TRS12E65F)

Applications
> Power supplies for industrial equipment
   (Base stations, PC servers, power supplying facilities for electric vehicles and laser beam machines, etc.)

> Power supplies for consumer equipment
   (Organic EL-TVs, audio amplifiers, projectors and multi-function printers, etc.)

Product Specifications
(Unless otherwise specified, @Ta=25 °C)

Part number			TRS12A65F	TRS12E65F
Packages			TO-220F-2L (Isolation type)	TO-220-2L (Non-isolation type)
Absolute maximum ratings	Repetitive peak reverse voltage V_RRM (V)		650
	Forward DC current I_F(DC) (A)		12
	Non-repetitive peak forward surge current I_FSM (A)	@t=10 ms	92	97
	Junction temperature T_j (°C)		175
Reverse current I_R typ. (μA)		@V_R=650 V	0.6
Forward voltage V_F typ. (V)		@I_F=12 A	1.45
Total capacitive charge Q_cj typ. (nC)		@V_R=0.1 to 400 V	30^[1]
Thermal resistance(junction-to-case) R_th(j-C) max (°C/W)			3.65	1.3

Internal Circuits

Application Circuit Example

The application circuits shown in this document are provided for reference purposes only. Thorough evaluation is required, especially at the mass-production design stage. Providing these application circuit examples does not grant any license for industrial property rights.

Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.

Source：http://www.semicon.toshiba.co.jp/eng/