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Toshiba Releases MOSFET Gate Driver Switch IPD for Automotive ECUs

2020-05-14 | Return

TOKYO— Toshiba Electronic Devices & Storage Corporation has launched “TPD7107F,” a gate driver switch IPD[1] that controls the conduction and shut-off of current supplied to automotive electronic control units (ECUs), such as junction boxes and body control modules. Shipments start today.

Combined with Toshiba’s automotive low On-resistance N-channel MOSFET[2], TPD7107F can form a high-side switch suitable for load current. As an electronic switch, free from the contact wear of mechanical relays, the new IPD can help to reduce the size and power consumption of automotive ECUs, and to make them maintenance-free.

By delivering enhanced functions that support the high reliability required for automotive ECUs—a self-protection function and various built-in diagnostic functions that are output to the microcontroller—the new IPD monitors load operation and the MOSFET to which it is connected. In abnormal operation, it rapidly turns off the MOSFET[3] to reduce the load on the MOSFET.

TPD7107F is housed in a WSON10A[4] package, and it reduces peripherals such as capacitors since it has built in a voltage boosting circuit. The new IPD secures supply current as low as 3μA (max.) during stand-by.

Applications
Automotive equipment:
ECUs (body control modules, junction boxes, etc.)
Power distribution modules
Semiconductor relays

Features
AEC-Q100 qualified
Can be used in combination with a low On-resistance N-channel MOSFET[2], depending on load current
Built-in voltage boosting circuit, reducing passive peripheral components
Built-in protection features and diagnostic output functions

(voltage abnormalities, over current, over temperature, reverse connection of power supply, protection for disconnection of GND terminal, and VDD short of load line, etc.)

Main Specifications
(Unless otherwise specified, @Ta=25℃)

Part number			TPD7107F
Package			WSON10A
Absolute maximum ratings	Supply voltage V_DD(1) (V)		-16 to +26
	Supply voltage V_DD(2) (V)	@t≤400ms	-36 to +36
	Supply voltage V_D(3) (V)	@t≤20ms	-40 to +40
	Input voltage V_IN(1) (V)		-16 to +26
	Input voltage V_IN(2) (V)	@t≤400ms	-36 to +36
	Input voltage V_IN(3) (V)	@t≤20ms	-40 to +40
	Output source current I_GATE(+) (mA)		Internal capacity
	Output sink current I_GATE(_－) (mA)		5
	Power dissipation P_D (W)		1.84
	Operating temperature T_opr (℃)		-40 to +125
Operating range	Operating supply voltage V_DD (V)	@T_j= -40 to +125℃	5.75 to 26.00

Notes:
[1] IPD (Intelligent Power Device)
[2] Example of compatible devices: TPHR7904PB (40V/150A), TPH1R104PB (40V/120A)
[3] Rapid off state current (typ.): 237mA
[4] WSON10A: 3.0x3.0mm (typ.)

Follow the link below for more on the new product.
TPD7107F

Source：http://www.semicon.toshiba.co.jp/eng/