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Toshiba’s 80V N-channel Power MOSFETs Fabricated with Latest Generation Process Help Improve Power Supply Efficiency

2020-03-30 | Return

- Expanding line-up of U-MOS X-H power MOSFET series -

TOKYO— Toshiba Electronic Devices & Storage Corporation has added 80V N-channel power MOSFETs to its “U-MOS X-H series” fabricated with the latest generation process. The new MOSFETs are suitable for switching power supplies in industrial equipment used in data centers and communication base stations.

The expanded line-up includes "TPH2R408QM," housed in SOP Advance, a surface-mount type packaging, and "TPN19008QM," housed in a TSON Advance package. Shipments starts today.

Drain-source On-resistance in the new 80V U-MOS X-H products, manufactured with the latest generation process, is approximately 40% lower than that of 80V products in the current generation process U-MOS Ⅷ-H series products. The trade-off between the drain-source On-resistance and the gate charge characteristics[1] has also been improved[2] by optimizing device structure. As a result, the new products feature industry’s lowest[3] power dissipation.

Toshiba is expanding its lineup of products that reduce power dissipation to help cut equipment power consumption.

Applications
Switching power supplies (High efficiency AC-DC converters, DC-DC converters, etc.)
Motor control equipment (Motor drive, etc.)

Features
The industry’s lowest[3] power dissipation (by improving the trade-off between On-resistance and gate charge characteristic[2])
Industry’s lowest level[3] On-resistance:
- RDS(ON)=2.43mΩ (max) ＠VGS=10V (TPH2R40QM)
- RDS(ON)=19mΩ (max) ＠VGS=10V (TPN19008QM)
High channel temperature rating : Tch=175℃

Main Specifications
(Unless otherwise specified, @Ta=25℃)

Part number			TPH2R408QM	TPN19008QM
Absolute Maximum ratings	Drain-source voltage V_DSS (V)		80	80
	Drain current (DC) I_D (A)	@T_c=25℃	120	34
	Channel temperature T_ch (℃)		175	175
Electrical characteristics	Drain-source On-resistance R_DS(ON) max (mΩ)	@V_GS=10V	2.43	19
		@V_GS=6V	3.5	28
	Total gate charge (gate-source plus gate-drain) Q_g typ. (nC)		87	16
	Gate switch charge Q_sw typ. (nC)		28	5.5
	Output charge Q_oss typ. (nC)		90	16.5
	Input capacitance C_iss typ. (pF)		5870	1020
Packages	Name		SOP Advance	TSON Advance
	Size typ. (mm)		5.0×6.0	3.3×3.3

Notes:

[1] Total gate charge (gate-source plus gate-drain), gate switch charge, output charge

[2] Compared with TPH4R008NH (U-MOS Ⅷ-H series), TPH2R408QM has improved its drain-source On-resistance x total gate charge by approximately 15%, drain-source On-resistance x gate switch charge by approximately 10%, and drain-source On-resistance x output charge by approximately 31%.

[3] As of March 30, 2020, Toshiba survey.

Follow the links below for more on the new products.
TPH2R408QM
TPN19008QM

Follow the link below for more on Toshiba 12-300V MOSFET line-up.
12V - 300V MOSFETs

Source: http://www.semicon.toshiba.co.jp/eng/