TOKYO— Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched two new 100V N-channel power MOSFETs for automotive 48V electrical system applications. The line-up includes the low On-resistance “XPH4R10ANB,” which has a drain current of 70A, and the “XPH6R30ANB,” with a 45A drain current. Mass production shipments start today.

The new products are Toshiba’s first[1] 100V N-channel power MOSFETs in the compact SOP Advance (WF) package for automotive applications. The wettable flank terminal structure of the package allows its automatic visual inspection when mounted on a circuit board, which helps increase reliability. The low On-resistance of the new MOSFETS helps reduce equipment power consumption; and the XPH4R10ANB delivers industry-leading[2] low On-resistance.

Applications
>>Automotive equipment
Power supply (DC/DC converter) and LED headlights, etc. (motor drives, switching regulators and load switches)

Features
>>Toshiba’s first[1] 100V products for automotive applications using the small, surface mount SOP Advance (WF) package
>>AEC-Q101 qualified
>>Low On-resistance:
   RDS(ON)=4.1mΩ (max) @VGS=10V (XPH4R10ANB)
   RDS(ON)=6.3mΩ (max) @VGS=10V (XPH6R30ANB)
>>SOP Advance (WF) package with wettable flank terminal structure

Main Specifications
(Unless otherwise specified, @Ta=25°C)

Part Number		Polarity		Absolute maximum ratings
				Drain- source voltage VDSS (V)	Drain current (DC) ID (A)		Drain current (pulsed) IDP (A)		Channel temperature Tch (℃)
XPH4R10ANB		N-channel		100	70		210		175
XPH6R30ANB					45		135
Drain-source On-resistance RDS(ON) max (mΩ)			Channel-to-case thermal impedance Zth(ch-c) max @Tc=25℃ (℃/W)			Package		Series
@VGS =6V	@VGS =10V
6.2	4.1		0.88			SOP Advance(WF)		U-MOSVIII-H
9.5	6.3		1.13					U-MOSVIII-H

Notes:
[1] As of December 25, 2019
[2] Among products with the same rating, as of December 25, 2019. Toshiba survey.

Follow the link below for more on Toshiba Automotive MOSFETs.
Automotive MOSFETs.

Source：https://www.toshiba.co.jp