TOKYO—In August, Toshiba Electronic Devices & Storage Corporation (“Toshiba”) will start mass production and shipments of “TPWR7904PB” and “TPW1R104PB”, 40V N-channel power MOSFETs for automotive applications. They are housed in the DSOP Advance(WF) packages that deliver double-sided cooling, low resistance, and small size.

The new products secure high heat dissipation and low On-resistance characteristics by mounting a U-MOS IX-H series chip, a MOSFET with the latest trench structure, into a DSOP Advance(WF) package. Heat generated by conduction loss is effectively dissipated, improving the flexibility of thermal design.

The U-MOS IX-H series also delivers lower switching noise than Toshiba’s previous U-MOS IV series, contributing to lower EMI[1]. The DSOP Advance(WF) package has a wettable flank terminal structure[2].

source：http://www.semicon.toshiba.co.jp/eng/