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Toshiba Electronic Devices & Storage Corporation Unveils New-Generation 600V Planar MOSFET Series

2018-01-09 | Return

TOKYO— Toshiba Electronic Devices & Storage Corporation today announced the launch of “π-MOS IX,” a new series of 600V planar MOSFET. Mass production starts today.

With an optimized chip design, the π-MOS IX series provides 5dB lower[1] peak EMI noise than the current π-MOS VII series, while maintaining the same level of efficiency. It offers greater design freedom and therefore helps reduce design workloads. In addition, the π-MOS IX series has the same rated avalanche current and rated DC current, making it simple to replace existing MOSFET.

Toshiba Electronic Devices & Storage Corporation will expand the π-MOS IX series with the addition of more 600V devices, plus 500V and 650V devices.

Applications

>Small to medium switching power supplies for notebook PC AC adapters and game console chargers

>Lighting power supplies

Features

>Combines high efficiency and low noise

>Rated avalanche current equivalent to the rated DC current

Main Specifications

Part Number	Package	Absolute Maximum Rating		R_DS(ON) MAX (Ω) at V_GS=10V	Q_g Typ. (nC)	C_iss Typ. (pF)	Current generation (π-MOS VII series) Part Number
Part Number	Package	V_DSS (V)	I_D (A)	R_DS(ON) MAX (Ω) at V_GS=10V	Q_g Typ. (nC)	C_iss Typ. (pF)	Current generation (π-MOS VII series) Part Number
TK650A60F	TO-220SIS	600	11	0.65	34	1320	TK11A60D
TK750A60F	TO-220SIS	600	10	0.75	30	1130	TK10A60D
TK1K2A60F	TO-220SIS	600	6	1.2	20.5	740	TK6A60D (1.25Ω)
TK1K9A60F	TO-220SIS	600	3.7	1.9	14	490	TK4A60DB (2.0Ω)

Note:

[1] Comparison between TK10A60D and TK750A60F (65W notebook PC adapter in the 200MHz region),

Source：http://www.semicon.toshiba.co.jp/eng/