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News
DFN2020-Packaged P-Channel MOSFETs from Diodes Incorporated Reduce Losses in Load Switching
2015-12-09 | ReturnCircuit designers looking for a simple and inexpensive method of disabling low-voltage power rails will appreciate the guaranteed low on-state resistance (RDS(ON)) of these MOSFETs under low gate drive conditions. This enables power rails down to 1.5V to be switched with minimal conduction losses. The DMP1022UFDF has an RDS(ON) of <20mΩ with a -2.5V gate drive, while the DMP2021UFDF achieves <26mΩ at -1.8V gate drive. Switching off power to idle processor cores and other inactive circuitry using MOSFETs as high-side load switches is a very effective way of extending battery life.
Equally important for space-critical applications is the small 4mm2 footprint DFN2020 package, which has an off-board height of just 0.6mm. This package also features an exposed drain pad with a thermal resistance of <10°C/W from junction to pad to assist in extracting heat from the package, reducing die temperature and increasing device reliability. For further information, visit the Company’s website at www.diodes.com.
Source:http://www.diodes.com/