November 20, 2015

Samples fabricated with the next generation TaRF8 process to be available in January

SP12T, a transmit RF switch IC with an integrated MIPI-RFFE^[4] controller for mobile applications, is suited to the 3GPP GSM, UMTS, W-CDMA, LTE and LTE-Advanced^[5] standards. Products utilizing TaRF8, the next generation process of Toshiba’s proprietary SOI-CMOS^[6] TarfSOI front-end process optimized for RF switches, achieves the lowest-class insertion loss in the industry, 0.32dB at 2.7GHz. Compared with products using Toshiba’s current TaRF6 process, insertion loss is improved by 0.1dB while maintaining the same level of distortion characteristics.

With the trend in mobile communications towards high-data-rate, high-capacity data transfers, RF switch ICs used in mobile devices, including smartphones, require multi-port support and improved RF performance. Lowering insertion loss is recognized as a particularly important factor in this, as it decreases RF transmission power loss, which can support a longer battery life for mobile devices.

Toshiba is developing high-performance RF switch ICs utilizing its in-house fab to apply SOI-CMOS technology, which is suitable for integrating analog and digital circuits. By handling all aspects of the production flow, from RF process technology development to the design and manufacturing of RF switch chips, Toshiba can swiftly improve SOI-CMOS process technology in response to feedback from the development results of its own RF switch IC products. This Integrated-Device-Manufacturer (IDM) approach allows Toshiba to quickly establish new process technologies suited to actual products and to enter the market with products fabricated with the latest process technology.

Toshiba will continue improving the performance of its TarfSOI process technology and work towards meeting customer and market requirements for RF switch ICs by introducing cutting-edge technology products ahead of other manufacturers.

Source：http://www.semicon.toshiba.co.jp/eng/