MOSFETs Provide Space-Saving Alternative to Devices in TO-253 (D2PAK) Package for Telecom, Server, Computing, Lighting, and Industrial Applications

MALVERN, Pa. — Oct. 8, 2015 — Vishay Intertechnology, Inc. (NYSE: VSH) today announced that it is now offering its 600 V E Series power MOSFETs in the compact PowerPAK® 8x8 package. The new Vishay Siliconix SiHH26N60E,SiHH21N60E, SiHH14N60E, and SiHH11N60E all feature a large drain terminal for low thermal resistance and a Kelvin source connection that can increase efficiency by improving the gate drive signal. Their new low-profile, surface-mount PowerPAK 8x8 package is RoHS-compliant, halogen-free and 100% lead (Pb)-free and provides a space-saving alternative to conventional TO-220 and TO-263 solutions.

The construction of the PowerPAK® 8x8 package allows one of the source pins to be arranged as a dedicated Kelvin source connection that separates the gate drive return path from the main current-carrying source terminals. This prevents the L x di / dt voltage drop in the high-current path from reducing the gate drive voltage that is applied to the E Series MOSFETs. This leads to faster switching and more noise immunity in power supply designs for telecom, server, computing, lighting, and industrial applications.

Built on Vishay's latest energy-efficient E Series superjunction technology, theSiHH26N60E, SiHH21N60E, SiHH14N60E, and SiHH11N60E feature low on-resistance down to 0.135 Ω at 10 V, ultra-low gate charge down to 31 nC, and low gate charge times on-resistance, a key figure of merit (FOM) for MOSFETs used in power conversion applications. These values translate into extremely low conduction and switching losses to save energy in power factor correction, flyback converters, and two-switch forward converters for server and telecom power supplies, HID and fluorescent ballast lighting, consumer and computing power adaptors, motor drives, solar PV inverters, induction heating, and welding equipment.

The MOSFETs are designed to withstand high energy pulses in the avalanche and commutation modes with guaranteed limits through 100 % UIS testing.

Device Specification Table:

Part number	VDS(V)	VGS(V)	ID (A) @  25 °C	RDS(ON) (Ω) @ 10 V (max.)	Qg (nC) @ 10 V (typ.)	CISStyp. (pF)
SiHH26N60E	600	± 30	25	0.135	77	2815
SiHH21N60E	600	± 30	20	0.176	55	2015
SiHH14N60E	600	± 30	16	0.228	41	1416
SiHH11N60E	600	± 30	11	0.339	31	1076

Samples and production quantities of the SiHH26N60E, SiHH21N60E, SiHH14N60E, and SiHH11N60E are available now, with lead times of 16 weeks.

Source：http://www.vishay.com/