Toshiba has launched “TK11S10N1L” which is a 60 V N-ch power MOSFET for automotive applications.

By mounting the MOSFET chip in the U-MOSVIII-H series in the low-resistance DPAK+ package, this product features industry leading^*1 low On-resistance characteristics.

Its low On-resistance characteristics can reduce the conduction loss, and with its low switching noise, EMI reduction can be expected. In addition, as the 100 V system also supports logic level drive (4.5 V), this product can be used for a variety of applications such as in engine ECUs.
TK11S10N1L will conform with AEC-Q101 automotive level qualification requirements.^*2 

*1: Comparison with the product of the same maximum rating, according to a survey by Toshiba (as of July 2015).

*2: Please check the conformity schedule in each case.

Features/ Outline Drawing

Features

• Industry leading^*1 low On-resistance:
    R_DS(ON)=28 mΩ (max) ＠V_GS=10 V
• High channel temperature rating: T_ch=175 °C
• Low switching noise
• Supports logic level drive (4.5 V)

*1: Comparison with the product of the same maximum rating, according to a survey by Toshiba (as of July 2015)

Main Specifications

Circuit Example

Direct injection engine ECUs