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Toshiba Releases 600V Super Junction Structure N-Channel Power MOSFET that Helps to Improve Efficiency of Power Supplies

2023-06-13 | Return

KAWASAKI, Japan—Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has expanded its line-up of N-channel power MOSFETs fabricated with the latest-generation process[1],

with a 600V super junction structure suitable for data centers, switching power supplies, and power conditioners for photovoltaic generators. The new product, "TK055U60Z1," is the first 600V product in the DTMOSVI series. Shipments start today.

By optimizing the gate design and process, 600V DTMOSVI series products reduce drain-source On-resistance per unit area by approximately 13%, and drain-source On-resistance × gate-drain charge, the figure of merit for MOSFET performance, by approximately 52%, compared to Toshiba’s current generation DTMOSIV-H series products with the same drain-source voltage rating. This ensures the series achieve both low conduction loss and low switching loss, and helps to improve efficiency of the switching power supplies.

The new product is housed in a TOLL package that allows Kelvin connection of its signal source terminal for the gate drive. The influence of inductance in the source wire in the package can be reduced to accentuate the high-speed switching performance of the MOSFET, which suppresses oscillation during switching.

Toshiba will continue to expand its 600V DTMOSVI series line-up, and its already released 650V DTMOSVI series products, and support energy conservation by reducing power loss in switching power supplies.

Note:
[1] As of June 2023.

Fig.1 Comparison of drain-source On-resistance and gate-drain charge

Applications
>Data centers (switching power supplies for servers, etc.)
>Power conditioners for photovoltaic generators
>Uninterruptible power systems

Features
>Achieves low drain-source On-resistance × gate-drain charge and enables high efficiency switching power supplies

Main Specifications

(Ta=25°C unless otherwise specified)

Part number				TK055U60Z1
Absolute maximum ratings	Drain-source voltage V_DSS (V)			600
	Drain current (DC) I_D (A)			40
	Channel temperature T_ch (°C)			150
Electrical characteristics	Drain-source On-resistance R_DS(ON) (mΩ)	V_GS=10V	max	55
	Total gate charge Q_g (nC)		typ.	65
	Gate-drain charge Q_gd (nC)		typ.	15
	Input capacitance C_iss (pF)		typ.	3680
Package	Name			TOLL
	Size (mm)		typ.	9.9×11.68, t=2.3

Follow the links below for more on the new product.

TK055U60Z1

Follow the link below for more on Toshiba’s MOSFETs.

MOSFETs

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* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

Source: https://www.global.toshiba