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Fast Recovery Diode Housed in a Press-Pack Package That Helps to Reduce the Size and Power Consumption of Power Converters

2022-06-30 | Return

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched a fast recovery diode “3000GXHH32” housed in a press-pack package in which a newly developed high-speed diode chips are mounted. The product is for power converters used in DC power transmission systems, industrial motor drive systems and the like. Its absolute maximum ratings are 4500 V (repetitive peak reverse voltage) and 3000 A (forward current, DC.)

The new product 3000GXHH32 features low conduction loss and a wide reverse recovery safe operating area (RRSOA). It has a cathode structure that can suppress voltage oscillation during reverse recovery and a high-voltage structure that allows high-temperature operation. This has extended the forward current (DC) from 1500 A to 3000 A, the peak power in the RRSOA by about 45 %, and the junction temperature rating from 125 °C to 150 °C (max) compared with the existing product[1] with the same package size. In addition, in the case of configuring a system with switching devices, this product allows faster turn on by suppressing the voltage oscillation during reverse recovery. Therefore, 3000GXHH32 allows users to configure a system with lower power consumption by combining with Toshiba’s IEGT[2] ST3000GXH31A.

3000GXHH32 helps to reduce the size and power consumption of power converters such as those for DC power transmission systems, static VAR compensators, and industrial motor drive systems.

Notes:
[1] 1500GXHH28
[2] IEGT: Injection Enhanced Gate Transistor

Applications
● DC power transmission
● Static VAR compensator
● Industrial motor drive

Features
● Forward current (DC) 3000 A
● Wide reverse recovery safe operating area
● Suppresses voltage oscillation during reverse recovery

Main Specifications

Part number			3000GXHH32
Package			SR85D
Absolute maximum ratings	Repetitive peak reverse voltage V_RRM (V)	@T_c=25 °C	4500
	Forward current (DC) I_F (A)	@T_f=42 °C	3000
	Non-repetitive peak forward surge current I_FSM (kA)	@10 ms half-sine wave, VR=0 V, Tj=150 °C	21


	Junction temperature T_j (°C)		-40 to 150
Electrical characteristics	Forward voltage V_F typ. (V)	@I_F=3000 A, T_j=150 °C	3.00
	Reverse recovery loss E_rr typ. (J)	@VR=2800 V, IF=3000 A, LS≈300 nH, Tj=150 °C Drive side: ST3000GXH31A di/dt≈5000 A/μs, Tj=150 °C	5.60

Internal Circuit

Application Circuit Examples

Note:
○ The application circuits shown in this document are provided for reference purposes only.
○ Thorough evaluation is required, especially at the mass-production design stage.
○ Providing these application circuit examples does not grant any license for industrial property rights.

Source: https://www.global.toshiba