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News
MCC Amplifies Performance with 1200V SiC MOSFETs in TO-247 Packages
2024-07-26 | Return
MCC is thrilled to introduce the latest additions to our robust portfolio: Ten 1200V SiC N-channel MOSFETs in versatile TO-247-4, TO-247-4L, and TO-247AB packages. Our new MOSFETs are available in 3-pin and 4-in (Kelvin source) configurations and meet the rising demand for high-power, high-voltage applications.
Boasting exceptional on-resistance values from 21mΩ to 120mΩ (typ.) and fast switching speeds, these components are the ones you can count on for reliable performance. Their excellent thermal properties and fast intrinsic body diode ensure smooth, efficient operation in the most challenging conditions, making them a must-have for critical power systems.
Features & Benefits:
>High-power capability: 1200V MOSFET with SiC technology
>Fast, reliable switching: Intrinsic body diode improves efficiency & ruggedness Enhanced performance: High switching speed with low gate charge
>Wide on-resistance selection: ranging from 21mΩ to 120mΩ (typ.)
>Efficiency: Superior thermal properties and low switching losses
>Durability: Avalanche ruggedness
>Versatility: TO247 3-pin and 4-pin package options
Source: http://www.mccsemi.com