Manufacturers
- Abracon
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- Diodes Incorporated
- DOMINANT Opto Technologies
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- OSRAM Opto Semiconductors
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- Walsin Technology
- Weidmuller
- Welwyn
- Wickmann
- Winbond
- Xilinx
- Yageo
- Zetex Semiconductors
- ZJPT / Maojwei
News
Infineon sets new industry standard for enhanced power density and efficiency with OptiMOS™ 6 200 V MOSFETs
2024-03-13 | ReturnThe OptiMOS 6 200 V portfolio delivers enhanced technical features compared to its predecessor, the OptiMOS 3. It features a 42 percent lower R DS(on) that contributes to reduced conduction losses and increased output power. Regarding diode behavior, the OptiMOS 6 200 V provides a significant increase in softness, more than three times that of the OptiMOS 3. Combined with up to 89 percent reduction in Q rr(typ), the switching and EMI behaviors are significantly improved. The technology also features improvements in parasitic capacitance linearity (C oss and C rss), which reduces oscillation during switching and lowers voltage overshoot. A tighter V GS(th) spread and lower transconductance aid in MOSFET paralleling and current sharing, leading to more uniform temperatures and reducing the number of paralleled MOSFETs.
The OptiMOS 6 200 V products feature an improved SOA and are classified as MSL 1 according to J-STD-020. These RoHS-compliant, lead-free products align with current industry standards.
Availability
The OptiMOS 6 200 V products are available in various packages making them ideal for a broad range of applications. This wide package portfolio includes the PQFN 3.3.x3.3, SuperSO8 5x6, TOLL, TO-220, D 2PAK-7P, as well as the D 2PAK-3P. All variants can be ordered now. More information is available at www.infineon.com/optimos-6-200v.
Source: http://www.infineon.com