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News
Qorvo® Boosts Performance in 750V EV Designs with Industry-leading SiC FET in D2PAK
2024-01-24 | ReturnThe UJ4SC075009B7S features a 9mΩ typical RDS(on) at 25°C needed for reducing conduction losses and maximizing efficiency in high voltage, multi-kilowatt automotive applications. Its small, surface-mount package enables automated assembly flows and reduces customer manufacturing costs. This new 750V family complements Qorvo’s existing 1200V and 1700V automotive SiC FETs in D2PAK packaging to form a complete portfolio addressing EV applications that span 400V and 800V battery architectures.
Ramanan Natarajan, director of Product Line Marketing for Qorvo’s Power Products, said, “The launch of this new family of SiC FETs demonstrates our commitment to providing EV powertrain designers the most advanced and efficient solutions for their unique automotive power challenges.”
These fourth generation SiC FETs leverage Qorvo’s unique cascode circuit configuration, in which a SiC JFET is co-packaged with a Si MOSFET to produce a device with the efficiency advantages of wide bandgap switch technology and the simpler gate drive of silicon MOSFETs. Efficiency in SiC FETs is dependent on conduction losses, and Qorvo’s cascode/JFET approach enables reduced conduction losses through industry-best RDS(on) and body diode reverse voltage drop.
The key features of the UJ4SC075009B7S include:
>Threshold voltage VG(th): 4.5V (typical) allowing 0 to 15V drive
>Low body diode VFSD: 1.1V
>Maximum operating temperature: 175°C
>Excellent reverse recovery: Qrr = 338 nC
>Low gate charge: QG = 75 nC
>Automotive Electronics Council (AEC) Q101-qualified
For more information about Qorvo’s advanced SiC solutions for power applications, please visit www.qorvo.com/go/gen4.
Source: http://www.qorvo.com