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Toshiba Releases 3rd Generation 650V SiC Schottky Barrier Diodes that Contribute to More Efficient Industrial Equipment

2023-07-13 | 반환

KAWASAKI, Japan—Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched the "TRSxxx65H series,” the company’s third and latest[1] generation of silicon carbide (SiC)

Schottky barrier diodes (SBDs) for industrial equipment. Volume shipments of the first 12 products, all 650V, start today, with seven products housed in TO-220-2L packages and five in DFN8×8 packages.

The new products use a new metal in a third generation SiC SBD chip that optimizes the junction barrier Schottky (JBS) structure[2] of the second generation products. They achieve industry-leading[3] low forward voltage of 1.2V (Typ.), 17% lower than the 1.45V (Typ.) of the previous generation. They also improve the trade-offs between forward voltage and total capacitive charge, and between forward voltage and reverse current, which reduces power dissipation and contributes to high efficiency of equipment.

Notes:
[1] As of July 2023.
[2] JBS structure lowers the electric field at the Schottky interface and reduces leakage current.
[3] As of July 2023, Toshiba survey.

Applications

>Switching power supplies
>EV charging stations
>Photovoltaic inverters

Features

>Industry-leading[3] low forward voltage: VF＝1.2V (Typ.) (IF=IF(DC))
>Low reverse current:
TRS6E65H IR＝1.1μA (Typ.) (VR=650V)
>Low total capacitive charge:
TRS6E65H QC＝17nC (Typ.) (VR=400V, f=1MHz)

Main Specifications
(Unless otherwise specified, Ta=25°C)

Part number	Package	Absolute maximum ratings
		Repetitive peak reverse voltage V_RRM(V)	Forward DC current I_F(DC) (A)		Non-repetitive peak forward surge current I_FSM (A)
				Temperature conditions T_c (°C)	f=50Hz (half-sine wave, t=10ms), T_c=25°C	Square wave, t=10μs, T_c=25°C
				Temperature conditions T_c (°C)	f=50Hz (half-sine wave, t=10ms), T_c=25°C	Square wave, t=10μs, T_c=25°C
TRS2E65H	TO-220-2L	650	2	164	19	120
TRS3E65H			3	161	28	170
TRS4E65H			4	158	36	230
TRS6E65H			6	153	41	310
TRS8E65H			8	149	56	410
TRS10E65H			10	148	62	510
TRS12E65H			12	148	74	640
TRS4V65H	DFN8×8		4	155	28	230
TRS6V65H			6	151	41	310
TRS8V65H			8	148	45	410
TRS10V65H			10	145	54	510
TRS12V65H			12	142	60	640

Electrical characteristics
Forward voltage (pulse measurement) V_F (V)	Reverse current (pulse measurement) I_R (μA)	Total capacitance C_t (pF)	Total capacitive charge Q_C (nC)
I_F=I_F(DC)	V_R=650V	V_R=400V, f=1MHz
Typ.	Typ.	Typ.	Typ.
1.2	0.2	10	6.5
	0.4	14	9
	0.6	17	12
	1.1	24	17
	1.5	31	22
	2.0	38	27
	2.4	46	33
	0.6	17	12
	1.1	24	17
	1.5	31	22
	2.0	38	27
	2.4	46	33

Follow the links below for more on the new product.

TRS2E65H
TRS3E65H
TRS4E65H
TRS6E65H
TRS8E65H
TRS10E65H
TRS12E65H
TRS4V65H
TRS6V65H
TRS8V65H
TRS10V65H
TRS12V65H

Follow the link below for more on Toshiba’s SiC Schottky Barrier Diodes.

SiC Schottky Barrier Diodes

* Company names, product names, and service names may be trademarks of their respective companies.
* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

Source: https://www.global.toshiba