Our Silicon Carbide MOSFETs are efficient and low-loss devices designed for high-frequency switching, high blocking voltage, and low on-resistance with avalanche capability.

Optimized for Vgs ranging from -4V to +18V (1200V) and -3V to +20V (1700V), these innovative components deliver the best performance when driven with maximum voltage. They also require a smaller heat sink thanks to their Rds(on) stability over temperature, which reduces overall component size and cost.

Features & Benefits:

>Optimized for higher switching frequency
>High blocking voltage with low on-resistance
>Stable on-resistance over temperature
>Reduced heat sink requirements
>Avalanche capability
>Enhanced overall system efficiency
>Reduced system size
>Improved power conversion efficiency
>Minimal power loss
>Cost-effective and compact design
>High voltage spike endurance without damage

Source: http://www.mccsemi.com