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Expansion of the lineup of 80 V N-channel power MOSFETs with the adoption of a new process that helps to improve the efficiency of power supplies : TK2R4E08QM, TK3R3E08QM, TK5R3E08QM, TK7R0E08QM, TK2R

2021-03-31 | 返回

Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched 10 products in its lineup of new generation 80 V N-channel power MOSFET “U-MOSⅩ-H series” suitable for

switching power supplies of industrial equipment. Three package types are available: “TK2R4E08QM, TK3R3E08QM, TK5R3E08QM and TK7R0E08QM” using TO-220, a through-hole type; “TK2R4A08QM, TK3R2A08QM, TK5R1A08QM and TK6R8A08QM” using TO-220SIS, an isolated through-hole type; and “TK5R1P08QM and TK6R9P08QM” using DPAK, a surface mount type.

By adopting the new generation U-MOSⅩ-H process with a low-voltage trench structure, the new products feature industry-leading[1] low drain-source On-resistance. This reduces conduction loss, helping reduce the power consumption of equipment. In addition, they have inherited the low gate switch charge characteristics from the existing generation process U-MOSVIII-H. This reduces the values of drain-source On-resistance x gate switch charge[2], a figure of merit for switching applications.

Notes:
[1] Among products with the same rating, as of February, 2021. Toshiba survey.
[2] Compared with TK100E08N1 (U-MOSVIII-H series), TK2R4E08QM has reduced its "typical drain-source On-resistance × typical gate switch charge" by about 8 %.

Features

> Industry’s lowest level[1] On-resistance :
RDS(ON)=2.44 mΩ (max) ＠VGS=10 V (TK2R4E08QM)
> Low charge (output and gate switch)
> Low gate voltage drive (6 V drive)

Applications

> Switching power supplies for industrial equipment
(High efficiency AC-DC converters, high efficiency DC-DC converters, etc.)
> Motor control equipment (Motor drivers, etc.)

Product Specifications

(Unless otherwise specified, @Ta=25 °C)

Part number	Absolute maximum ratings		Drain-source On-resistance R_DS(ON) max (mΩ)		Total gate charge Q_g typ. (nC)	Gate switch charge Q_SW typ. (nC)	Output charge Q_oss typ. (nC)
	Drain- source voltage V_DSS (V)	Drain current (DC) I_D (A)	Drain-source On-resistance R_DS(ON) max (mΩ)
	Drain- source voltage V_DSS (V)	@T_c= 25 °C	@V_GS= 10 V	@V_GS= 6 V
TK2R4E08QM	80	120	2.44	3.2	178	52	210
TK3R3E08QM		120	3.3	4.2	110	31	119
TK5R3E08QM		120	5.3	7.3	55	17	66
TK7R0E08QM		64	7.0	9.7	39	11.6	46
TK2R4A08QM		100	2.44	3.1	179	54	210
TK3R2A08QM		92	3.2	4.1	102	31	119
TK5R1A08QM		70	5.1	4.1	54	17	66
TK6R8A08QM		58	6.8	9.5	39	13	46
TK5R1P08QM		84	5.1	7.0	56	17	66
TK6R9P08QM		62	6.9	9.6	39	11.6	46

Internal Circuits

Application Circuit Examples

Note: The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass production design stage.
Providing these application circuit examples does not grant any license for industrial property rights.

* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

Source：http://www.semicon.toshiba.co.jp/eng/