- Four new devices boost efficiency and power density of industrial equipment -



KAWASAKI, Japan—Toshiba Electronic Devices & Storage Corporation has launched four 650V silicon carbide (SiC) MOSFETs, equipped with its latest[1] 3rd generation SiC MOSFET chips and housed in a compact DFN8×8 package, suitable for industrial equipment, such as switched-mode power supplies and power conditioners for photovoltaic generators. Volume shipments of the four devices, “TW031V65C,” “TW054V65C,” “TW092V65C,” and “TW123V65C,” start today.

The new products are the first 3rd generation SiC MOSFETs to use the small surface-mount DFN8×8 package, which reduces volume by more than 90% compared to lead-inserted packages, such as TO-247 and TO-247-4L(X) and improves equipment power density. Surface mounting also allows use of parasitic impedance[2] components smaller than those of lead-inserted packages, reducing switching losses. DFN8×8 is a 4-pin[3] package, allowing use of a Kelvin connection of its signal source terminal for the gate drive. This reduces the influence of inductance in the source wire within the package, achieving high-speed switching performance; in the case of TW054V65C, it reduces turn-on loss by approximately 55% and turn-off loss by approximately 25%[4] compared to current Toshiba products[5], helping to reduce power loss in equipment.

Toshiba will continue to expand its lineup to contribute to improved equipment efficiency and increased power capacity.



Measurement condition: VDD=400V, VGS=18V/0V, ID=20A, Ta=25°C, L=100μH, Rg (external gate resistor) =4.7Ω
The freewheeling diode uses the diode between the source and drain of each product.
(Toshiba comparison, as of May 2025)

Figure 1. Comparison of turn-on loss (Eon) and turn-off loss (Eoff) between TO-247 and DFN8×8 package

Notes:
[1] As of May 2025.
[2] Resistance, inductance, etc.
[3] A product with a signal-source pin connected close to the FET chip.
[4] As of May 2025, values measured by Toshiba. Please refer to Figure 1.
[5] A 650V 3rd generation SiC MOSFET with equivalent voltage and On-resistance that uses the TO-247 package without Kelvin connection.

Applications
Switched mode power supplies in servers, data centers, communications equipment, etc.
EV charging stations
Photovoltaic inverters
Uninterruptible power supplies

Features
DFN8×8 surface-mount package. Enables equipment miniaturization of and automated assembly. Low switching loss.
Toshiba’s 3rd generation SiC MOSFETs
Good temperature dependence of drain-source On-resistance by optimization of drift resistance and channel resistance ratio
Low drain-source On-resistance×gate-drain charges
Low diode forward voltage: VDSF=-1.35V(typ.) (VGS=-5V)

Main Specifications
(Unless otherwise specified, Ta=25°C)


Source：https://toshiba.semicon-storage.com/