Optimal Thermal Performance with Low RDS(on) in a TO-220 Package

MMCC Semi is unleashing the ultimate component for high-power switching — our 100V N-Channel MOSFET, MCP2D6N10Y. Leveraging advanced split-gate-trench (SGT) technology and low on-resistance of 2.6mΩ, this MOSFET is made to slash conduction losses while enhancing thermal efficiency.

Demanding power electronics get an extra boost of efficiency from its ultra-low junction-to-case thermal resistance of 0.6K/W. The TO-220 package only enhances its performance thanks to its high surge capability.

An ideal combination of robust current handling, superior heat dissipation, and optimal efficiency ensures this N-channel MOSFET delivers unwavering operation in high-power applications ranging from battery management systems and motor drives to DC-DC converters.

Features & Benefits:

>High-performance 100V N-channel MOSFET
>Utilizes SGT technology
>Low on-resistance of 2.6mΩ
>Impressive junction-to-case thermal resistance of 0.6K/W
>Maximizes thermal efficiency and minimizes power losses
>Excellent thermal capabilities
>Robust current handling capacity
>Designed for TO-220 package with high surge capability

Source: http://www.mccsemi.com