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New Vishay Intertechnology 890 nm IR Emitting Diode Offers High Typical Radiant Intensity of 235 mW/sr and Fast Switching Times of 15 ns

2024-07-17 | 返回

Built on Surface Emitter Technology, High Speed Device Features Excellent Temperature Coefficient of VF of -1.0 mV/K

MALVERN, Pa. — July 17, 2024 — Vishay Intertechnology, Inc.is broadening its optoelectronics portfolio with the introduction of a new 890 nm high speed infrared (IR) emitting diode in a clear, untinted leaded plastic package. Based on surface emitter technology, the Vishay Semiconductors TSHF5211 combines an excellent -1.0 mV/K temperature coefficient of VF with higher radiant intensity and faster rise and fall times than previous-generation devices.

The emitter diode released today offers high typical radiant intensity of 235 mW/sr at a 100 mA drive current, which is 50 % higher than previous-generation solutions. With fast switching times of 15 ns, low typical forward voltage of 1.5 V, and a narrow ± 10° angle of half intensity, the device will serve as a high intensity emitter for smoke detectors and industrial sensors. In these applications, the TSHF5211 offers good spectral matching with silicon photodetectors.

RoHS-compliant, halogen-free, and Vishay Green, the device is lead (Pb)-free and capable of lead (Pb)-free soldering up to 260 °C.

Samples and production quantities of the TSHF5211 are available now, with lead times of 20 weeks for large orders.

Source: http://www.vishay.com