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Lineup Expansion of 1200 V SiC MOSFET Module that Contributes to High Efficiency and Downsizing of Industrial Equipment

2024-06-05 | 返回

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has started mass production of a 3rd generation silicon carbide (SiC) 1200 V and drain current (DC) rating 400 A of SiC MOSFET module “MG400Q2YMS3” for industrial equipment and has expanded its lineup.

The new product MG400Q2YMS3 offers low conduction loss with low drain-source on-voltage (sense) of 0.9 V (typ.)[1]. It also offers low switching loss with both turn-on switching loss and turn-off switching loss of 13 mJ (typ.)[2]. These help to reduce power loss of equipment and the size of cooling device.
MG400Q2YMS3 has a low stray inductance of 12 nH (typ.) and is capable of high-speed switching. In addition, it suppresses surge voltage in switching operation. Thus, it is available for high frequency isolated DC-DC converter.

Toshiba’s SiC MOSFET module of 2-153A1A package has a lineup of five existing products, MG250YD2YMS3 (2200 V / 250 A), MG400V2YMS3 (1700 V / 400 A), MG250V2YMS3 (1700 V / 250 A), and MG600Q2YMS3 (1200 V / 600 A), including new products. This provides a wider range of product selection.
Toshiba will continue to meet the needs for high efficiency and the downsizing of industrial equipment.

Notes
[1] Test condition: ID=400 A, VGS=+20 V, Tch=25 °C
[2] Test condition: VDD=600 V, ID=400 A, Tch=150 °C

Applications
Industrial equipment

>Auxiliary power supply for railway vehicles
>Renewable energy power generation systems
>Motor control equipment for industrial equipment
>High frequency DC-DC converters, etc.

Features
>Low drain-source on-voltage (sense):
VDS(on)sense=0.9 V (typ.) (ID=400 A, VGS=+20 V, Tch=25 °C)
>Low turn-on switching loss:
Eon=13 mJ (typ.) (VDD=600 V, ID=400 A, Tch=150 °C)
>Low turn-off switching loss:
Eoff=13 mJ (typ.) (VDD=600 V, ID=400 A, Tch=150 °C)
>Low stray inductance:
LsPN=12 nH (typ.)

Internal Circuit

Application Circuit Example

Note:
The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass-production design stage.
Providing these application circuit examples does not grant any license for industrial property rights.

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* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

Source: https://www.global.toshiba