Manufacturers
- Abracon
- Adam Tech
- Aerospace, Defense & Marine
- Agastat
- AIC
- AKM Semiconductor
- Alcoswitch
- Allegro
- Alps Electric
- Altera
- AMI Semiconductor
- AMP
- ams
- Analog Devices (ADI)
- Aptina Imaging
- Atmel
- Avago / Broadcom
- AVX
- Axicom
- Bccomponents
- Beyschlag
- BI Technologies
- Bourns Inc.
- Bowei Integrated Circuits
- Bridgelux
- Buchanan
- California Micro Devices
- Catalyst Semiconductor
- CGS
- Cirrus Logic
- Citizen Electronics
- CML Microcircuits
- Coiltronics
- Cooper Bussmann
- Corcom
- Core Logic
- Cree
- CSR PLC
- CTS
- Cypress Semiconductor
- Dale
- Data Image
- Deutsch
- Diodes Incorporated
- DOMINANT Opto Technologies
- E-T-A
- Eaton
- ECS
- Edison Opto
- Elcon
- EPCOS
- Epistar
- Epson
- Everlight Electronics
- Exar
- Fairchild Semiconductor
- FCI
- Freescale Semiconductor
- Fremont Micro Devices (FMD)
- Fujitsu Semiconductor
- Fulltech Electric
- General Semiconductor
- Harvatek
- Holsworthy
- Hsuan Mao Technology
- IDT
- Infineon Technologies
- Innolux
- International Rectifier (IR)
- Intersil
- IRC
- ISSI
- IXYS-IC
- Jing Cheng Electronical
- JL World
- Johanson Dielectrics
- Johanson Technology
- JRC / NJR
- JST
- KEC
- Kilovac
- Kingbright
- Kyocera Industrial Ceramics
- LEDiL
- Linear Technology / ADI
- Lite-On Technology
- Littelfuse
- Lumex
- Lumileds
- Luminary Micro
- Luminus Devices
- Macronix
- Maojwei / ZJPT
- Maxim Integrated
- MCC
- Mean Well Enterprises
- Microchip Technology
- Micron
- Microsemi
- Mini-Circuits
- Molex
- Murata Manufacturing
- Murata Power Solutions
- MWT
- National Semiconductor
- Nichicon
- Nippon Chemi-Con
- NJR / JRC
- NVE
- NXP Semiconductors
- OEG
- Omnivision
- ON Semiconductor
- Optek Technology
- Optrex
- OSRAM Opto Semiconductors
- OTAX
- Panasonic
- Peregrine(pSemi)
- Potter & Brumfield
- Power Integrations
- PowerStor
- Preci-Dip
- Prewell
- Products Unlimited
- Pulse Electronics
- PulseCore Semiconductor
- Qorvo
- Raychem
- Renesas Electronics
- RFMD
- Richtek Technology
- ROHM Semiconductor
- Rubycon
- Samsung Electro-Mechanics
- Samsung Semiconductor
- Schaffner
- Schrack
- Seiko Instruments, Inc. (SII)
- Semtech
- Sensata
- Seoul Semiconductor
- Sfernice
- Sharp Display
- Sharp Microelectronics
- Silicon Labs
- Siliconix
- Skyworks Solutions
- SoniCrest / JL World
- Spansion
- Sprague
- Stanley Electric
- STMicroelectronics
- Sunny Electronics
- Susumu (SSM)
- Taimag
- Taiyo Yuden
- TDK
- TDK-Lambda
- TE Connectivity
- Teccor
- Texas Instruments (TI)
- Thin Film
- Tianma Micro-electronics
- TOCOS
- TOKO
- Toshiba Electronic Components
- TT Electronics
- Tusonix
- TXC
- Tyntek
- Vishay
- Vishay Precision Group
- Vitramon
- Walsin Technology
- Weidmuller
- Welwyn
- Wickmann
- Winbond
- Xilinx
- Yageo
- Zetex Semiconductors
- ZJPT / Maojwei
新闻中心
Vishay Intertechnology IGBT Power Modules in Redesigned INT-A-PAK Package Reduce Conduction and Switching Losses
2024-02-21 | 返回MALVERN, Pa. — Feb. 21, 2024 — Vishay Intertechnology, Inc.today introduced five new half-bridge IGBT power modules in the newly redesigned INT-A-PAK package. Built on Vishay’s Trench IGBT technology, the VS-GT100TS065S, VS-GT150TS065S, VS-GT200TS065S, VS-GT100TS065N, and VS-GT200TS065N offer designers a choice of two best in class technologies — low VCE(ON) or low Eoff — to lower conduction or switching losses in high current inverter stages for transportation, energy, and industrial applications.
The half-bridge devices released today combine Trench IGBTs — which deliver improved power savings versus other devices on the market — with Gen IV FRED Pt® anti-parallel diodes with ultra soft reverse recovery characteristics. Offering a new gate pin orientation, the modules’ compact INT-A-PAK package is now 100 % compatible with the 34 mm industry-standard package to offer a mechanical drop-in replacement.
The industrial-level devices will be used in power supply inverters for railway equipment; energy generation, distribution, and storage systems; welding equipment; motor drives; and robotics. To reduce conduction losses in output stages for TIG welding machines, the VS-GT100TS065S, VS-GT150TS065S, and VS-GT200TS065S offer an industry-low collector to emitter voltage of ≤ 1.07 V at +125 °C and rated current. For high frequency power applications, the VS-GT100TS065N and VS-GT200TS065N offer extremely low switching losses, with Eoff down to 1.0 mJ at +125 °C and rated current.
The RoHS-compliant modules feature 650 V collector to emitter voltages, continuous collector current from 100 A to 200 A, and very low junction to case thermal resistance. UL-approved file E78996, the devices can be directly mounted to heatsinks and offer low EMI to reduce snubbing requirements.
Device Specification Table:
Part # |
VCES |
IC |
VCE(ON) |
Eoff |
Speed |
Package |
@ IC and +125 °C |
||||||
VS-GT100TS065S |
650 V |
100 A |
1.02 V |
6.5 mJ |
DC to 1 kHz |
INT-A-PAK |
VS-GT150TS065S |
650 V |
150 A |
1.05 V |
10.3 mJ |
DC to 1 kHz |
INT-A-PAK |
VS-GT200TS065S |
650 V |
200 A |
1.07 V |
13.7 mJ |
DC to 1 kHz |
INT-A-PAK |
VS-GT100TS065N |
650 V |
100 A |
2.12 V |
1.0 mJ |
8 kHz to 30 kHz |
INT-A-PAK |
VS-GT200TS065N |
650 V |
200 A |
2.13 V |
3.86 mJ |
8 kHz to 30 kHz |
INT-A-PAK |
Samples and production quantities of the new IGBT power modules are available now, with lead times of 15 weeks.
Source: http://www.vishay.com