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新闻中心
Lineup Expansion of 80 V N-Channel Power MOSFET Products in Toshiba’s U-MOSX-H Series that Help Reduce the Power Consumption of Power Supplies
2023-08-23 | 返回The new products have reduced the figure of merits (FOMs: expressed as On-resistance × charge characteristics[2].) In case of TPH3R008QM, it has reduced its FOMs, drain-source On-resistance × total gate charge by approximately 48 %, drain-source On-resistance × gate switch charge by approximately 16 %, and drain-source On-resistance × output charge by approximately 33 %, compared to Toshiba’s existing product TPH4R008NH. This contributes to lowering power consumption of equipment.
Toshiba is expanding its lineup of products to help cut equipment power consumption.
Notes :
[1] As of August 2023.
[2] Total gate charge, gate switch charge, output charge
Applications
>Switching power supplies (high efficiency AC-DC converters, high efficiency DC-DC converters, etc.)
>Motor control equipment (motor drives, etc.)
Features
>Latest generation[1] process U-MOSX-H series
>Low On-resistance:
TPH3R008QM RDS(ON)=3 mΩ (max) (VGS=10 V)
TPH6R008QM RDS(ON)=6 mΩ (max) (VGS=10 V)
TPH8R808QM RDS(ON)=8.8 mΩ (max) (VGS=10 V)
>High channel temperature: Tch (max)=175 °C
Internal Circuit
Application Circuit Examples
Note :
The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass-production design stage.
Providing these application circuit examples does not grant any license for industrial property rights.
* Company names, product names, and service names may be trademarks of their respective companies.
* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.
Source: https://www.global.toshiba