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ROHM’s New EcoGaN™ Power Stage ICs Contribute to Smaller Size and Lower Loss

2023-08-31 | 返回

Reduces component volume by 99% and power loss by 55% when replacing silicon MOSFETs

ROHM has developed power stage ICs with built-in 650V GaN HEMTs and gate driver - the BM3G0xxMUV-LB series. The devices are ideal for primary power supplies inside industrial and consumer applications such as data servers and AC adapters.

Consumer and industrial sectors more and more demand greater energy savings to achieve a sustainable society in the last few years. However, while GaN HEMTs are expected to significantly contribute to greater miniaturization and improved power conversion efficiency, the difficulty in handling the gate compared to silicon MOSFETs requires the use of a dedicated gate driver. In response, ROHM developed power stage ICs that integrate GaN HEMTs and gate drivers into a single package by leveraging core power and analog technologies, facilitating mounting considerably.

On top, the BM3G0xxMUV-LB series (BM3G015MUV-LB, BM3G007MUV-LB) incorporates additional functions and peripheral components designed to maximize GaN HEMT performance along with 650V GaN HEMTs - the next generation of power devices. And ROHM’s features such as a wide drive voltage range (2.5V to 30V) enable compatibility with virtually any controller IC in primary power supplies - facilitating replacement of existing silicon (Super Junction) MOSFETs. This makes it possible to simultaneously reduce component volume and power loss by approx. 99% and 55%, respectively, achieving higher efficiency in a smaller size.

ISAAC LIN, General Manager, PSADC (Power Semiconductor Applications Development Center), Delta Electronics, Inc.
GaN devices are attracting a great deal of attention in the industries as a device that greatly contributes to the miniaturization and energy saving of equipment.
The ROHM's new products have realized high speed and safe gate drive by using ROHM's original analog technology. These products will further promote the use of GaN power devices, which are expected to grow.

Product Lineup
A wide drive voltage range (2.5V to 30V), short propagation delay, and fast startup time enable compatibility with virtually any controller IC in primary power supplies.

Part No.	Input Voltage Range [V]	Supply Pin Voltage [V]	Supply Pin Operating Current Typ.[µA]	Supply Pin Quiescent Current Typ.[µA]	ON Resistance^* Typ.[mΩ]	Turn ON Delay Time Typ.[ns]
BM3G015MUV-LB	-0.6 to +30	6.25 to 30	450	150	150	11
BM3G007MUV-LB	-0.6 to +30	6.25 to 30	650	180	70	12

*: ID=0.5A, VIN=5V, Ta=25°C

Application Examples

Optimized for primary power supplies (AC-DC, PFC circuits) in a variety of applications.
Consumer: Home appliances, AC adapters, PCs, TVs, Refrigerators, Air conditioners
Industrial: Servers, Office automation devices

Product Information

Applicable Part Nos.
BM3G015MUV-LB, BM3G007MUV-LB
Evaluation Board Part Nos.
BM3G007MUV-EVK-002 (PFC 240W)
BM3G007MUV-EVK-003
BM3G015MUV-EVK-003

EcoGaN™
Refers to ROHM’s new lineup of GaN devices that contribute to energy conservation and miniaturization by maximizing GaN characteristics to achieve lower application power consumption, smaller peripheral components, and simpler designs requiring fewer parts.

Terminology

Primary Power Supply
The power supply that is isolated from the output block (i.e. by a transformer) to ensure safety in industrial and consumer applications. As the power supply block across the insulation layer is called the primary side (with the output block called the secondary side), the power supply on the primary side is referred to the primary power supply.

GaN HEMT
GaN (Gallium Nitride) is a compound semiconductor material used in next-generation power devices. It is beginning to see adoption due to its superior properties (over silicon), such as excellent high-frequency characteristics. HEMT stands for High Electron Mobility Transistor.

Super Junction MOSFET (Metal Oxide Semiconductor Field Effect Transistor)
A type of transistor, MOSFETs can be divided by device structure into DMOSFET, planar, and super junction topologies. Super junction MOSFETs deliver superior breakdown voltage and output current than both DMOSFETs and planar types while also featuring lower loss when handling large power.

Featured Products

Revolutionizes AC-DC power supply circuits
650V EcoGaN™ Power Stage ICs
BM3G015MUV-LB, BM3G007MUV-LB (PDF: 1MB)

Source: http://www.rohm.com