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新闻中心
Infineon extends its PQFN 2x2 mm² product portfolio with best-in-class OptiMOS™ power MOSFETs
2023-07-26 | 返回The new OptiMOS 6 40 V and OptiMOS 5 25 V and 30 V power MOSFETs further optimize the proven OptiMOS technology for high-performance designs. They offer leading-edge silicon technology, package reliability, and superior thermal resistance (R thJC, max = 3.2 K/W) in the ultra-small PQFN 2x2 mm² package. The new devices combine industry-leading low on-resistance R DS(on) with industry-leading figures of merit (FOMs, Q G and Q OSS) for outstanding dynamic switching performance. As a result, MOSFETs with ultra-low switching and reduced conduction losses ensure optimal energy efficiency and power density, all while simplifying thermal management.
With the compact PQFN 2x2 mm² package outline, the OptiMOS power switches enable an improved system form factor with smaller, more flexible geometric outlines for end-user applications. The MOSFETs facilitate reliable system design with less need for paralleling, significantly reducing space and system cost.
Availability
The new OptiMOS 6 power MOSFET 40 V (ISK057N04LM6) with 5.7 mΩ R DS(on) and OptiMOS 5 power MOSFETs 25 V (ISK024NE2LM5) and 30 V (ISK036N03LM5) with 2.4 mΩ and 3.6 mΩ R DS(on), respectively, are available in the improved PQFN 2x2 mm² package and can be ordered now. More information is available at www.infineon.com/optimos-6-40v and www.infineon.com/pqfn-2x2.
Source: http://www.infineon.com