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Lineup Expansion of 80 V/100 V Automotive N-Channel Power MOSFETs that Use L-TOGL™ Package Supporting Large Currents with High Heat Dissipation

2023-06-28 | 返回

Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched two automotive N-channel power MOSFET products that use the L-TOGL™ package to meet the growing demand

for 48 V batteries in automotive equipment. They are 80 V “XPQR8308QB” and 100 V “XPQ1R00AQB.”

The products are required to have high reliability, high drain current ratings and high heat dissipation design for load switches and semiconductor relays used for inverters, battery management systems and junction boxes of light EVs and ISGs[1].

By using Toshiba’s new U-MOS X-H process, the new products feature excellently low On-resistance. In addition, the L-TOGL™ package adopts a Cu clip structure that connects the MOSFET chip to outer leads with a thick Cu frame. This has reduced the package resistance by approximately 70 % and channel-to-case thermal impedance by 50 % compared with Toshiba’s existing package TO-220SM(W)[2]. Furthermore, this package uses gull wing leads which can reduce mounting stress, helping improve the reliability of solder joints for mounting devices on boards. These features enable low loss of equipment and high heat dissipation for large current flow.

MOSFETs may be connected in parallel in applications that require large current. In such parallel connections, it is ideal that MOSFETs connected in parallel have small characteristics differences. To reduce such differences, we support grouping shipment based on the gate threshold voltage[3].

The lineup now has four products housed in the L-TOGL™ package, including Toshiba’s existing 40 V products, “XPQ1R004PB and XPQR3004PB.” Toshiba provides suitable products for automotive applications that increasingly require large current, high power density design, and high robustness.

Notes:
[1] ISG: Integrated Starter Generator
[2] Toshiba’s existing product XK1R9F10QB (100 V product)
[3] Toshiba can offer grouping shipment in which the gate threshold voltage range is 0.4 V for each reel. However, specifying a specific group is not allowed. For details, please contact our sales representatives.

Applications

>Automotive equipment (inverters, semiconductor relays, load switches, motor drives, etc.)

Features

>Low On-resistance:
XPQR8308QB RDS(ON)=0.83 mΩ (max) (VGS=10 V)
XPQ1R00AQB RDS(ON)=1.03 mΩ (max) (VGS=10 V)
>L-TOGL™ package with high heat dissipation
>AEC-Q101 qualified

Main Specifications

(Ta=25 °C unless otherwise specified)

Part number	Polarity	Absolute maximum ratings				Drain-source On-resistance R_DS(ON) (mΩ)
		Drain- source voltage V_DSS (V)	Drain current (DC) I_D (A)	Drain current (pulsed) I_DP (A)	Channel temperature T_ch (°C)	V_GS=6 V	V_GS=10 V
						max	max
XPQR8308QB	N-channel	80	350	1050	175	1.23	0.83
XPQ1R00AQB		100	300	900	175	1.93	1.03

Internal Circuit

Application Circuit Example

Note:
The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass-production design stage.
Providing these application circuit examples does not grant any license for industrial property rights.

* L-TOGL™ is a trademark of Toshiba Electronic Devices & Storage Corporation.
* Other company names, product names, and service names may be trademarks of their respective companies.
* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

Source: https://www.global.toshiba