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Toshiba Launches its 3rd Generation SiC MOSFETs that Contribute to the Higher Efficiency of Industrial Equipment

2022-08-30 | 返回

- The lineup covers 1200V and 650V products -

KAWASAKI, Japan— Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched new power devices, the “TWxxNxxxC series,” its 3rd generation silicon carbide(SiC) MOSFETs[1][2] that deliver low on-resistance and significantly reduced switching loss. Ten products, five 1200V and five 650V products, have started shipping today.

The new products reduce on-resistance per unit area (RDS(ON)A) by about 43%[3], allowing the drain-source on-resistance * gate-drain charge (RDS(ON)*Qgd), an important index that represents the relationship between conduction loss and switching loss, to be lowered by about 80%[4]. This cuts the switching loss by about 20%[5], and lowers both on-resistance and switching loss. The new products contribute to higher equipment efficiency.

Toshiba will continue to expand its lineup of power devices and to enhance its production facilities, and aims to realize a carbon-free economy by providing high-performance power devices that are easy to use.

Notes:
[1] Toshiba has developed a device structure that reduces on-resistance per unit area (RDS(ON)A) by using a structure with built-in schottky barrier diode developed for the 2nd generation MOSFETs, and also reduces feedback capacitance in the JFET region.
[2] MOSFET: metal-oxide-semiconductor field-effect transistor
[3] Comparison of the new 1200V SiC MOSFETs when RDS(ON)A is set to 1 in the 2nd generation SiC MOSFETs. Toshiba survey.
[4] Comparison of the new 1200V SiC MOSFETs when RDS(ON)*Qgd is set to 1 in the 2nd generation SiC MOSFETs. Toshiba survey.
[5] Comparison of the new 1200V SiC MOSFETs and the 2nd generation SiC MOSFETs. Toshiba survey.

Applications
● Switching power supplies (servers, data center, communications equipment, etc.)
● EV charging stations
● Photovoltaic inverters
● Uninterruptible power supplies (UPS)

Features
● Low on-resistance per unit area (RDS(ON)A)
● Low drain-source on-resistance * gate-drain charge (RDS(ON)*Qgd)
● Low diode forward voltage: VDSF = -1.35 V (typ.) @VGS = -5 V

Main Specifications

(@Ta=25°C unless otherwise specified)

Part number		Package		Absolute maximum ratings
				Drain-source voltage V_DSS (V)		Gate-source voltage V_GSS (V)		Drain current (DC) I_D (A)





								@T_c=25℃

TW015N120C		TO-247		1200		-10 to 25		100
TW030N120C								60
TW045N120C								40
TW060N120C								36
TW140N120C								20
TW015N65C				650				100
TW027N65C								58
TW048N65C								40
TW083N65C								30
TW107N65C								20
Electrical characteristics
Drain- Source On- resistance R_DS(ON) typ. (mΩ)	Gate threshold voltage V_th (V)		Total gate charge Q_g typ. (nC)		Gate- drain charge Q_gd typ. (nC)		Input capacitance C_iss typ. (pF)		Diode forward voltage V_DSF typ. (V)





@V_GS=18V	@V_DS=10V						@V_DS=400V, f=100kHz		@V_GS= -5V

15	3.0 to 5.0		158		23		6000		-1.35
30			82		13		2925
45			57		8.9		1969
60			46		7.8		1530
140			24		4.2		691
15			128		19		4850
27			65		10		2288
48			41		6.2		1362
83			28		3.9		873
107			21		2.3		600

Follow the links below for more on Toshiba SiC MOSFETs.
▶ SiC Power Devices
▶ SiC MOSFETs

Source: https://www.global.toshiba