- Launch of U-MOS X-H Series adopting Toshiba’s latest generation process -

TOKYO— Toshiba Electronic Devices & Storage Corporation has released “XK1R9F10QB,” a 100V N-channel power MOSFET suitable for automotive 48V equipment applications such as load switches, switching power supplies and driving of motors. Shipments start today.

The new product is the first in Toshiba’s new U-MOS X-H Series of MOSFET with a trench structure, and is fabricated with the company’s latest[1] generation process. Mounted on a low-resistance TO-220SM(W) package, it delivers industry-leading low On-resistance[2], with a maximum On-resistance of 1.92mΩ, an approximate 20% reduction against the current “TK160F10N1L.” This advance helps to reduce equipment power consumption. It also delivers reduced switching noise, due to optimization of capacitance characteristics, which helps to reduce EMI[3] of equipment. In addition, the threshold voltage width is tightened to 1V to enhance switching synchronization when used in parallel.

Applications
Automotive equipment (Load switches, switching power supplies and motor drives, etc.)

Features
U-MOS X-H Series MOSFET with a trench structure
Industry-leading low On-resistance
　　RDS(ON)=1.92mΩ (max) ＠VGS=10V
AEC-Q101 qualified

Main Specifications
(@Ta=25°C)


Notes:
[1] As of February 25, 2020
[2] Comparison with products with the same VDSS maximum rating and package class; According to a Toshiba survey, as of February 25, 2020.
[3] EMI (Electro Magnetic Interference)

Follow the link below for more on the new product.
XK1R9F10QB

Source: http://www.semicon.toshiba.co.jp/eng/