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Lineup expansion of small MOSFETs for automotive equipment that help reduce power consumption with low On-resistance

2021-09-30 | 返回

Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched 30 V product “SSM6K818R”, N-channel MOSFETs for automotive equipment suitable for headlight control switches

and so forth to expand its lineup.

The new product feature industry-leading[1] low On-resistance with our new process. And they have expanded the chip mounting capability with their flat-lead packages, reducing their thermal resistance. Accordingly , the products feature a power dissipation rating of 1.5 W with the small TSOP6F package, helping reduce the power consumption of equipment. In addition, the TSOP6F package has reduced the mounting area by about 70% compared to the SOP-8 package with a similar power dissipation rating, helping reduce the size of equipment. Furthermore, they conform to AEC-Q101, allowing them to be used for various purposes including automotive applications such as headlight control switches, light control switches, and load switches for USB power delivery.

And another 40 V product SSM6K804R[2] will be in mass production.

Notes :
[1] Comparison with the product of the TSOP6F class package and the same maximum rating, according to a survey by Toshiba (as of July 2021)
[2] Mass production will be started in plan October, 2021 (as of September 2021)

Applications

> Automotive equipment (headlight, turn lamp, daytime running light, USB charger, etc.)

Features

> Reducing power consumption with industry-leading[1] low On-resistance :
RDS(ON)=12 mΩ (max) at VGS=4.5 V (SSM6K818R)
> By reducing thermal resistance, featuring a power dissipation rating of 1.5 W with the TSOP6F package
> AEC-Q101 qualified

Main Specifications

(@Ta=25 °C)

Part number	Polarity	Package		Absolute maximum ratings
		Name	Size typ. (mm)	Drain- source voltage V_DSS (V)	Gate- source voltage V_GSS (V)	Drain current (DC) I_D (A)	Power dissipation P_D (W)
		Name	Size typ. (mm)	Drain- source voltage V_DSS (V)	Gate- source voltage V_GSS (V)	Drain current (DC) I_D (A)	Power dissipation P_D (W)
SSM6K818R	N-channel	TSOP6F	2.9×2.8 ×0.8	30	±20	15	1.5
SSM6K804R^[2]				40	±20	12	1.5
SSM6K809R^[3]				60	±20	6	1.5
SSM6K810R^[3]				100	±20	3.5	1.5
SSM6K819R^[3]				100	±20	10	1.5

Notes:
[3] Existing products

Internal Circuit

Application Circuit Examples

Note :

The application circuits shown in this document are provided for reference purposes only.
Thorough evaluation is required, especially at the mass-production design stage.
Providing these application circuit examples does not grant any license for industrial property rights.

* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

Source: http://www.semicon.toshiba.co.jp/eng/