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新闻中心
Lineup expansion of SiC SBDs of 650 V contributing to high efficiency of power supply PFCs : TRS12N65FB, TRS16N65FB, TRS20N65FB, TRS24N65FB
2020-07-16 | 返回The new products are Toshiba’s second-generation SiC SBDs with the improved JBS (Junction Barrier controlled Schottky) structure. They feature high surge current capability and low-loss characteristics, with a non-repetitive peak forward surge current rating (Per Leg) of 92 A[1], about 53 %[2] improvement, and typical forward voltage (Pre Leg) of 1.45 V, about 6 %[2] reduction compared with our first-generation products. These features allow higher efficiency and larger margins in thermal design of equipment.
Toshiba will expand lineup in the future and contribute to higher efficiency and downsizing of communications equipment, servers, inverters, and other products.
Notes :
[1] Case of TRS24N65FB
[2] TRS24N65FB is compared with TRS24N65D
Features
High non-repetitive peak forward surge current ratings :
IFSM (Per Leg) / (Both Legs)=52 A / 104 A (TRS12N65FB)
IFSM (Per Leg) / (Both Legs)=65 A / 130 A (TRS16N65FB)
IFSM (Per Leg) / (Both Legs)=79 A / 158 A (TRS20N65FB)
IFSM (Per Leg) / (Both Legs)=92 A / 184 A (TRS24N65FB)
Low forward voltage :
VF (Per Leg)=1.45 V (typ.) @IF=6 A (TRS12N65FB)
VF (Per Leg)=1.45 V (typ.) @IF=8 A (TRS16N65FB)
VF (Per Leg)=1.45 V (typ.) @IF=10 A (TRS20N65FB)
VF (Per Leg)=1.45 V (typ.) @IF=12 A (TRS24N65FB)
Applications
Power supplies for industrial equipment
(base stations, PC servers, power supplying facilities for electric vehicles and laser beam machines, etc.)
Power supplies for consumer equipment
(organic EL-TVs, audio amplifiers, projectors and multi-function printers, etc.
Product Specifications
(Unless otherwise specified, @Ta=25 °C)
Part number |
||||||
Packages |
TO-247 |
|||||
Absolute |
Repetitive peak |
650 |
||||
Forward DC |
Both |
12 |
16 |
20 |
24 |
|
Non-repetitive |
Per |
52 |
65 |
79 |
92 |
|
Both |
104 |
130 |
158 |
184 |
||
Junction temperature |
175 |
|||||
Reverse current |
Per |
0.3 |
0.4 |
0.5 |
0.6 |
|
Forward voltage |
Per |
|
1.45 |
|||
@IF (A) |
6 |
8 |
10 |
12 |
||
Total junction |
Per |
15 |
19.4 |
24 |
30 |
|
Thermal resistance |
Per |
2.2 |
1.8 |
1.4 |
1.3 |
|
Both |
1.1 |
0.9 |
0.7 |
0.65 |
Internal Circuit
Application Circuit Example
The application circuits shown in this document are provided for reference purposes only. Thorough evaluation is required, especially at the mass-production design stage. Providing these application circuit examples does not grant any license for industrial property rights.
Information in this document, including product prices and specifications, content of services and contact information, is correct on the date of the announcement but is subject to change without prior notice.
Source:http://www.semicon.toshiba.co.jp/eng/