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Toshiba Launches Photocoupler with Built-in Protective Functions for Medium to High Current IGBT/MOSFET

2020-03-10 | 返回

TOKYO—Toshiba Electronic Devices & Storage Corporation has introduced “TLP5231,” a pre-drive photocoupler for medium to high current insulated gate bipolar transistor (IGBT) and MOSFET, for industrial inverters and photovoltaic (PV) power conditioning systems. The new pre-drive photocoupler delivers various built-in functions[1], including an overcurrent detection by monitoring collector voltage. Shipments start today.

The new pre-drive photocoupler controls the gates of medium to high current IGBT and MOSFET by using external p-channel and n-channel complementary MOSFET as buffers.

Current products[2] require the use of buffer circuits composed of bipolar transistors for current amplification, which consume base current during operation. The new product eanbles use of external complementary MOSFET buffers, limiting current consumption to during charge or discharge of the buffer MOSFET gate, which reduces power consumption.

By changing external complementary MOSFET buffer sizes, the TLP5231 can produce required gate currents for various IGBT and MOSFET. A configuration of the TLP5231, the MOSFET buffer, and the IGBT and MOSFET can be used as platforms to cover the power requirements of systems, contributing to the easier design.

Other features include control of “gate soft turn-off time” with another external n-channel MOSFET after VCE(sat) overcurrent detection, and, in addition to VCE(sat) overcurrent detection by monitoring the collector voltage, UVLO[3] detection that outputs any fault signal to the primary side. These new features, not found in current products[2], make it easier for users to design gate drive circuits.

Applications
IGBT and power MOSFET gate drivers (pre-drivers)
AC and brushless DC motor control
Industrial inverters and uninterruptible power supplies (UPS)
Photovoltaic (PV) power conditioning systems

Features
Dual outputs with built-in active timing control, suitable for driving p-channel and n-channel complementary-MOSFET buffers
Configurable gate soft turn-off time using another external n-channel MOSFET when overcurrent is detected.
Fault signals are output on the primary side when overcurrent is detected by monitoring collector voltage, or when an UVLO is detected.

Main Specifications
(Unless otherwise specified, @Ta = -40 to 110°C.)

Part number		TLP5231
Absolute maximum ratings	Peak high-level output current I_OPH (A)	-2.5
Absolute maximum ratings	Peak low-level output current I_OPL (A)	+2.5
Electrical characteristics	V_OUTP high level output current I_OUTPH max (A)	-1.0
	V_OUTP low level output current I_OUTPL min (A)	1.0
	V_OUTN high level output current I_OUTNH max (A)	-1.0
	V_OUTN low level output current I_OUTNL min (A)	1.0
	High level supply current (V_CC2) I_CC2H max (mA)	10.2
	Low level supply current (V_CC2) I_CC2L max (mA)	10.2
	High level supply current (V_EE) I_EEH min (mA)	-9.2
	Low level supply current (V_EE) I_EEL min (mA)	-9.2
	Threshold input current (H/L) I_FHL max (mA)	3.5
Recommended operating conditions	Total output supply voltage (V_CC2-V_EE) (V)	21.5 to 30
	Negative output supply voltage (V_E-V_EE) (V)	-15 to -6.5
	Positive output supply voltage (V_CC2-V_E) (V)	15 to 23.5
Switching characteristics	Propagation delay time (L/H) t_pLH (ns)	100 to 300
	Propagation delay time (H/L) t_pHL (ns)	100 to 300
	Propagation delay skew(device to device) t_psk (ns)	-200 to 200
	High-level common-mode transient immunity CM_H min (kV/μs)	±25
	Low-level common-mode transient immunity CM_L min (kV/μs)	±25
Function	Protection function	IGBT V_CE(sat) detection, UVLO^[4]
Function	Feedback (FAULT): Activates when V_CE(sat) detecton, UVLO detection (open-collector output)
Isolation characteristic (@T_a = 25°C)	Isolation voltage BV_S min (Vrms)	5000
Mechanical parameters	Clearance distances min (mm)	8.0
	Creepage disances min (mm)	8.0
	Internal isolation thickness min (mm)	0.4

Notes:
[1] Gate signal soft turn off, fault feedback function
[2] TLP5214, TLP5214A
[3] UVLO: Under voltage lockout
[4] Common at VE

Follow the link below for more on the new product.
TLP5231

Follow the link below for more on Toshiba’s optical devices line-up.
Optical Semiconductor Devices

Source: http://www.semicon.toshiba.co.jp/eng/