Manufacturers

新闻中心

Qorvo® Launches Highest-Performance Wideband GaN Power Amplifier for Mission-Critical Defense Applications

2020-01-28 | 返回

GAN TECHNOLOGY ENABLES BREAKTHROUGH SYSTEM PERFORMANCE IN RADAR AND COMMUNICATIONS SYSTEMS

GREENSBORO, NC – January 28, 2020 – Qorvo®, a leading provider of innovative RF solutions that connect the world, today introduced the world’s highest-performance wideband power amplifier (PA). Designed for electronic warfare, radar and test instrumentation applications, the TGA2962 breaks through multiple performance barriers with an industry-leading 10 Watts of RF power over the 2-20 GHz frequency range, 13dB large-signal gain and 20-35 percent power added efficiency. This combination delivers the flexibility that system designers need to improve system performance and reliability while reducing component count, footprint and cost.

Roger Hall, GM of Qorvo’s High Performance Solutions business, said “Qorvo has taken a significant step forward in the wideband space with the TGA2962, enhancing not just frequency range but every other performance aspect. No other company offers a single PA with this output power, bandwidth, power-added-efficiency and large signal gain.”

The TGA2962 is built on Qorvo’s highly reliable Gallium Nitride (GaN) QGaN15 process technology, enabling its industry-leading capabilities. In addition, improved component integration – and use of a smaller driver amp enabled by the 13dB large-signal gain – result in a smaller device, making this a compelling solution for programs that require size, weight, power and cost (SWAP-C) improvements.

Eric Higham, director of the Advanced Semiconductor Applications service and the Advanced Defense Systems service for Strategy Analytics, said “The defense market, primarily radar and communications applications, is seeing strong growth from new systems and major platform upgrades. This is also providing fuel for the GaN growth engine and should bode well for companies like Qorvo.”1

The TGA2962 wideband 10 W GaN PA, with specifications below, is available now as a die to qualified customers.

Frequency Range	2-20 GHz
P_SAT(PIN = 27 dBm)	10 W-15 W
PAE (PIN = 27 dBm)	20-35%
Large Signal Gain	13 dB
Small Signal Gain	20 dB
Bias	22V/1.68A
Die Dimensions	3.24x3.24 mm die package

Qorvo offers the industry’s largest, most innovative GaN-on-SiC portfolio to help customers realize significant improvements in efficiency and operational bandwidth. The company’s products deliver high power density, reduced size, excellent gain, high reliability and process maturity, with volume production dating back to 2000.

Source：http://www.qorvo.com