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Unleash High-Power Performance in MCC’s Uni/Bidirectional ESD Diodes

2024-06-24 | 返回

Enhanced Density and Heat Dissipation in a Compact CSP1006-2 Package

Say hello to MCC Semi’s latest lineup of High-power, Uni/Bidirectional, Single-Line ESD protection devices designed to deliver the pinnacle of performance: CSPSBHC4V8LB, CSPSBHC6V3LB, and CSPHC4V8L. Leveraging innovative redistribution layer (RDL) technology to bridge the chip terminal pad with the package terminal pad to enable high power realization and a compact CSP1006-2 package, these diodes enhance package density, electrical performance, and heat dissipation.

With peak pulse currents from 1350W to 1600W and VWRM between 3.3V and 4.8V, our ESD diodes provide robust and reliable protection from electrostatic events. A low clamping voltage of 15V to 16.5V only adds to their performance.

Rigorously tested to meet IEC 61000-4-2 (ESD) immunity standards, our new ESD diodes withstand air discharges of ±30kV and contact discharges of ±30kV. To assure reliable protection in challenging environments, our diodes comply with IEC 61000-4-5 (Lightning) standards of 90A/100A (8/20μs).

From consumer devices to critical telecommunication applications, MCC’s high-power ESD diodes are the ideal solution for unquestionable performance.

Features & Benefits:

>RDL (redistribution layer) technology: reduces size and enhances performance
>High peak pulse current (PPK): 1350W to 1600W
>VRWM selection: ranging from 3.3V to 4.8V
>Ultra-compact package: CSP1006-2
>Low clamping voltage: 15V to 16.5V
>Successfully passes IEC 61000-4-2 (ESD) immunity test:
>Air discharge: ±30kV
>Contact discharge: ±30kV
>Compliant with IEC 61000-4-5 (Lightning) standards: 90A/100A (8/20μs)

Source: http://www.mccsemi.com