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新闻中心
New OptiMOS™ 7 MOSFETs improve on-state resistance, design robustness and switching efficiency in automotive applications
2024-06-11 | 返回“As a technology leader in power semiconductors, Infineon is committed to shape the future technology standards in automotive power MOSFETs in terms of power efficiency, innovative and robust power packaging with high quality,” said Axel Hahn, Senior Vice President and General Manager Automotive LV MOSFETs of Infineon. “We are providing our customers a diverse product portfolio and are addressing all their requirements to drive the development of modern automotive applications.”
By combining 300 mm thin-wafer technology and innovative packaging, the new OptiMOS 7 technology enables significant performance advantages in all available voltage classes. As a result, the components are now available in various rugged automotive power packages, including Single SSO8 (5x6), Dual SSO8 (5x6), mTOLG (8x8) and sTOLL (7x8). The family offers high power density and energy efficiency with the industry's lowest on-state resistance (e.g. 1.3 mΩ max in a single SSO8 (5x6) 80V package) in the smallest form factor. The devices also offer reduced switching losses, improved Safe Operating Area (SOA) robustness and high avalanche current capability. With this, they enable a highly efficient system design for tomorrow's automotive applications.
Availability
The OptiMOS 7 products are now available in the following different robust automotive power packages in 40 V, 80 V and 100 V: Dual SSO8 (5x6), Single SSO8 (5x6), mTOLG (8x8), and sTOLL (7x8). Further information is available at www.infineon.com/OptiMOS7/.
Source: http://www.infineon.com