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新闻中心
Infineon advances automotive and industrial solutions with newly launched CoolSiC™ MOSFET 750 V G1 product family
2024-02-27 | 返回The CoolSiC MOSFET 750 V G1 technology features excellent RDS (on) x Q fr and superior RDS (on) x Q oss Figure-of-Merits (FOMs), resulting in ultra-high efficiency in hard-switching and soft-switching topologies respectively. Its unique combination of high threshold voltage (V GS(th), Typ. of 4.3 V) with low Q GD/Q GS ratio ensures high robustness against parasitic turn-on and enables unipolar gate driving, leading to increased power density and low cost of the systems. All devices use Infineon’s proprietary die-attach technology which delivers outstanding thermal impedance for equivalent die sizes. The highly reliable gate oxide design combined with Infineon’s qualification standards delivers robust and long-term performance.
With a granular portfolio ranging from 8 to 140 mΩ RDS (on) at 25°C, this new CoolSiC MOSFET 750 V G1 product family meets a wide range of needs. Its design ensures lower conduction and switching losses, boosting overall system efficiency. Its innovative packages minimize thermal resistance, facilitate improved heat dissipation, and optimize in-circuit power loop inductance, thereby resulting in high power density and reduced system costs. It’s important to note that this product family features the cutting-edge QDPAK top-side cooled package.
Availability
The CoolSiC MOSFET 750 V G1 for automotive applications comes in QDPAK TSC, D2PAK-7L, and TO-247-4 packages, while for industrial applications, QDPAK TSC and TO-247-4 packages are offered. More information is available at www.infineon.com/coolsic-mosfet-discretes and in a Webinar Series to learn more about the benefits of CoolSiC MOSFET 750 V G1 in onboard charging applications.
Source: http://www.infineon.com