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新闻中心
MCC’s New 1700V SiC MOSFET: High-Voltage Performance, Low On-Resistance
2024-02-13 | 返回
MCC Semi is proud to unveil our 1700V SiC MOSFET, SICW400N170A-BP. Designed to elevate power conversion in a range of applications, this MOSFET features ultra-low on-resistance of only 400mΩ and high blocking voltage capability.
But the impressive features don’t stop there... Our SiC MOSFET enables high-speed switching while ensuring minimal conduction losses — essential requirements for optimizing frequency-dependent systems.
A standard, yet durable TO-247AB package delivers effective operation at a gate-source voltage of 20V with superior thermal stability and an operating junction temperature of +175°C.
This unwavering reliability in harsh conditions only adds to the component's appeal and versatility for various high-voltage applications, including EV charging stations and renewable energy systems.
Features & Benefits:
>High blocking voltage capability (1700V)
>Ultra-low on-resistance (400mΩ) enhances efficiency
>Low capacitance enables faster switching
>Excellent thermal stability
>High operating junction temperature (to +175°C)
>Standard TO-247AB package
Source: http://www.mccsemi.com