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New 62mm package in Infineon’s CoolSiC™ portfolio helps engineers to achieve higher efficiency and power density

2023-11-20 | 返回

Munich, Germany – 20 November, 2023 – Infineon Technologies AG today announced the expansion of its CoolSiC 1200 V and 2000 V MOSFET module families with a new industry-standard

package. The proven 62mm device is designed in half-bridge topology and is based on the recently introduced and advanced M1H silicon carbide (SiC) MOSFET technology. The package enables the use of SiC for mid-power applications from 250 kW – where silicon reaches the limits of power density with IGBT technology. Compared to a 62mm IGBT module, the list of applications now additionally includes solar, server, energy storage, EV charger, traction, commercial induction cooking and power conversion systems.

The M1H technology enables a significantly wider gate voltage window, ensuring high robustness to driver and layout-induced voltage spikes at the gate without any restrictions even at high switching frequencies. In addition to that, very low switching and transmission losses minimize cooling requirements. Combined with a high reverse voltage, these devices meet another requirement of modern system design. By using Infineon’s CoolSiC chip technology, converter designs can be made more efficient, the nominal power per inverter can be increased and system costs can be reduced.

With baseplate and screw connections, the package features a very rugged mechanical design optimized for highest system availability, minimum service costs and downtime losses. Outstanding reliability is achieved through high thermal cycling capability and a continuous operating temperature (T vjop) of 150°C. The symmetrical internal package design provides identical switching conditions for the upper and lower switches. Optionally, the thermal performance of the module can be further enhanced with pre-applied thermal interface material (TIM).

Availability

The CoolSiC 62mm package MOSFETs are available in 1200 V variants of 5 mΩ/180 A, 2 mΩ/420 A and 1 mΩ/560 A. The 2000 V portfolio will include the 4 mΩ/300 A and 3 mΩ/400 A variants. The portfolio will be completed in Q1 2024 with the 1200 V/3 mΩ and 2000 V/5 mΩ variants. An evaluation board is available for rapid characterization of the modules (double pulse/continuous operation). For ease of use, it provides flexible adjustment of the gate voltage and gate resistors. At the same time, it can be used as a reference design for driver boards for volume production. More information is available at www.infineon.com/SiC.

More information about Infineon’s contribution to energy efficiency: www.infineon.com/green-energy

Source: http://www.infineon.com