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Toshiba Releases 100V N-Channel Power MOSFET That Supports Miniaturization of Power Supply Circuits

2023-06-29 | 返回

KAWASAKI, Japan—Toshiba Electronic Devices & Storage Corporation ("Toshiba") has launched “TPH3R10AQM,” a 100V N-channel power MOSFET fabricated with Toshiba’s latest-

generation process, U-MOS X-H. The product targets applications such as switching circuits and hot swap circuits[1] on the power lines of industrial equipment used for data centers and communications base stations. Shipments start today.

TPH3R10AQM has industry-leading[2] 3.1mΩ maximum drain-source On-resistance, 16%[2] lower than Toshiba’s 100V product, “TPH3R70APL,” which uses the earlier generation process. By the same comparison, TPH3R10AQM has expanded its safe operating area by 76%[3] making it suitable for linear mode operation. Reducing the On-resistance and expanding the linear operating range in the safe operating area reduce the number of parallel connections. Furthermore, its gate threshold voltage range of 2.5V to 3.5V, makes it less likely to malfunction due to gate voltage noise.
The new product uses the highly footprint compatible SOP Advance(N) package.

Toshiba will continue to expand its line-up of power MOSFETs that can increase the efficiency of power supplies by reducing loss, and help lower equipment power consumption.

Applications

>Power supplies for communications equipment such as for data centers and communications base stations
>Switching power supplies (High efficiency DC-DC converters, etc.)

Features

>Featuring Industry-leading[2] excellent low On-resistance: RDS(ON)=3.1mΩ (max) (VGS=10V)
>Wide safe operating area
>High channel temperature rating: Tch (max)=175°C

Notes:
[1] The circuit for connecting and disconnecting components to a system without shutting down the system while the equipment is in operation.
[2] Toshiba survey as of June 2023.
[3] Pulse width: tw=10ms, VDS=48V

Main Specifications
(Unless otherwise specified, Ta=25°C)

Part number			TPH3R10AQM
Absolute Maximum Ratings	Drain-source voltage V_DSS (V)		100
	Drain current (DC) I_D (A)	T_c=25°C	120
	Channel temperature T_ch (°C)		175
Electrical Characteristics	Drain-source On-resistance R_DS(ON) max (mΩ)	V_GS=10V	3.1
		V_GS=6V	6.0
	Total gate charge (gate-source plus gate-drain) Q_g typ. (nC)		83
	Gate switch charge Q_sw typ. (nC)		32
	Output charge Q_oss typ. (nC)		88
	Input capacitance C_iss typ. (pF)		5180
Package	Name		SOP Advance(N)
	Size typ. (mm)		4.9×6.1

Follow the link below for more on the new product.

TPH3R10AQM

Follow the link below for more on Toshiba’s MOSFETs.

MOSFETs

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* Information in this document, including product prices and specifications, content of services and contact information, is current on the date of the announcement but is subject to change without prior notice.

Source: https://www.global.toshiba