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ROHM Begins Mass Production of 650V GaN HEMTs That Deliver Class-Leading Performance

2023-05-08 | 返回

Increasing efficiency and miniaturization in a wide range of power supply systems, including servers and AC adapters

ROHM has started with the mass production of 650V GaN (Gallium Nitride) HEMTs GNP1070TC-Z and GNP1150TCA-Z optimized for a wide range of power supply systems applications. These new products are jointly developed with Ancora Semiconductors, Inc., an affiliate of Delta Electronics, Inc., that develops GaN devices.

Improving the efficiency of power supplies and motors, which account for most of the world’s electricity consumption, has become a significant hurdle to achieving a decarbonized society. The adoption of new materials such as GaN and SiC are key to improving the efficiency of power supplies.

After initiating mass production of 150V GaN HEMTs – featuring a gate breakdown voltage of 8V in 2022 – in March 2023 ROHM established control IC technology for maximizing GaN performance. This time, ROHM developed 650V GaN HEMTs featuring market-leading performance that contributes to higher efficiency and smaller size in a wider range of power supply systems.

The GNP1070TC-Z and GNP1150TCA-Z deliver industry-leading performance in terms of RDS(ON) × Ciss / RDS(ON) × Coss, a figure of merit for GaN HEMTs, translating to higher efficiency in power supply systems. At the same time, a built-in ESD protection element improves electrostatic breakdown resistance up to 3.5kV, leading to higher application reliability. GaN HEMTs’ high-speed switching characteristics also contribute to greater miniaturization of peripheral components.

ROHM continues to improve device performance through its EcoGaN™ lineup of GaN devices that contributes to greater energy application savings and miniaturization. While developing ROHM products, we will also promote joint development through strategic partnerships to contribute to solving social issues by making applications more efficient and compact.

Product Lineup

Part No.	Drain Current I_D[A] T_C=25°C	Drain-Source ON Resistance R_DS(on) (Typ.) [mΩ]	Total Gate Charge Qg (Typ.) [nC]	Input Capacitance C_iss (Typ.) [pF]	Output Capacitance C_oss (Typ.) [pF]
GNP1070TC-Z	20	70	5.2	200	50
GNP1150TCA-Z	11	150	2.7	112	19

Application Examples
Ideal for a broad range of power supply systems in industrial equipment and consumer devices, including servers and AC adapters.

Terminology

GaN HEMT
GaN (Gallium Nitride) is a compound semiconductor material used in next-generation power devices. It is beginning to see adoption due to its superior properties over silicon, such as excellent high-frequency characteristics.
HEMT stands for High Electron Mobility Transistor.

RDS(ON)×Ciss / RDS(ON)×Coss
An index for evaluating switching performance, where Ciss refers to the overall capacitance from the input side and Coss does from the output side.
The lower this value is, the faster the switching speed and lower loss during switching.

ESD (Electrostatic Discharge)
A surge that occurs when charged objects such as the human body and electronic equipment come into contact with each other. This type of surge can cause malfunction or destruction of circuits and equipment.

Source: http://www.rohm.com