KAWASAKI, Japan—Toshiba Electronic Devices & Storage Corporation (“Toshiba”) has launched two silicon carbide (SiC) MOSFET Dual Modules: “MG600Q2YMS3,” with a voltage rating of 1200V and drain current rating of 600A; and “MG400V2YMS3,” with a voltage rating of 1700V and drain current rating of 400A. The first Toshiba products with these voltage ratings,　they join the previously released MG800FXF2YMS3 in a lineup of 1200V, 1700V and 3300V devices.



The new modules have mounting compatibility with widely used silicon (Si) IGBT modules. Their low energy loss characteristics meet needs for higher efficiency and size reductions in industrial equipment, such as converters and inverters for railway vehicles, and renewable energy power generation systems.

Applications
●Inverters and converters for railway vehicles
●Renewable energy power generation systems
●Motor control equipment
●High frequency DC-DC converter

Features
●Mounting compatible with Si IGBT modules
●Lower loss than Si IGBT modules
MG600Q2YMS3
　VDS(on)sense =0.9V (typ.) @ID=600A, Tch=25°C
　Eon=25mJ (typ.), Eoff=28mJ (typ.) @VDS=600V, ID=600A, Tch=150°C
MG400V2YMS3
　VDS(on)sense=0.8V (typ.) @ID=400A, Tch=25°C
　Eon=28mJ (typ.), Eoff=27mJ (typ.) @VDS=900V, ID=400A, Tch=150°C
●Built-in NTC Thermistor

Main Specifications
(unless otherwise specified, @Tc=25°C)

Part number				MG600Q2YMS3	MG400V2YMS3
Package				2-153A1A
Absolute	Drain-source voltage  VDSS  (V)			1200	1700
maximum	Gate-source voltage  VGSS  (V)			+25/-10	+25/-10
ratings	Drain current (DC)  ID  (A)			600	400
	Drain current (pulsed)  IDP  (A)			1200	800
	Channel temperature  Tch  (°C)			150	150
	Isolation voltage Visol (Vrms)			4000	4000
Electrical	Drain-source on-voltage (sense)	@VGS =+20V,		0.9	0.8
characteristics	VDS(on)sense  typ.  (V)	Tch＝25°C		@ID＝600A	@ID＝400A
	Source-drain on-voltage (sense)	@VGS =+20V,		0.8	0.8
	VSD(on)sense  typ.  (V)	Tch＝25°C		@IS＝600A	@IS＝400A
	Source-drain off-voltage (sense)	@VGS =-6V,		1.6	1.6
	VSD(off)sense  typ.  (V)	Tch＝25°C		@IS＝600A	@IS＝400A
	Turn-on switching loss Eon typ. (mJ)	@Tch=150°C		25	28
	Eon  typ.  (mJ)			@ VDS=600V,	@VDS=900V,
				ID=600A	ID=400A
	Turn-off switching loss Eoff typ. (mJ)	@Tch=150°C		28	27
	Eoff  typ.  (mJ)			@ VDS=600V,	@VDS=900V,
				ID=600A	ID=400A
Thermistor characteristics	Rated NTC resistance  R  typ.  (kΩ)			5.0	5.0
	NTC B value  B  typ.  (K)		＠TNTC=25 - 150°C	3375	3375

Follow the link for more on Toshiba’s SiC Power Devices.
●SiC Power Devices

Source: https://www.global.toshiba