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Toshiba Electronic Devices & Storage Corporation Releases Small Dual MOSFET for Relay Drivers

2018-01-29 | Return

TOKYO— Toshiba Electronic Devices & Storage Corporation today announced the launch of “SSM6N357R,” a new MOSFET with a built-in diode between the drain and gate terminals. The device is suited to driving inductive loads, such as mechanical relays. Volume shipments start today.

SSM6N357R integrates a pull-down resistor, a series resistor and a Zener diode, which reduces the parts count and save on board space. Furthermore, since it is a dual-type package product (2 in 1), it has an approximately 42% smaller mounting area than the alternative of using two SSM3K357R (2.4 x 2.9 x 0.8 mm) single-type package products.

An industry-standard TSOP6F-class package, a low operating voltage of 3.0V and AEC-Q101 qualification make the SSM6N357R suitable for automotive and many other applications.

Applications

>Relay and solenoid control for automotive applications

>Relay and solenoid control for industrial applications

>Clutch control for OA equipment

Features

>Reduced board space and part count (pull-down resistor, series resistor and Zener diode integrated.)

>Low operating voltage of 3.0 V

>Dual package (2 in 1)

>AEC-Q101 qualified

Main Specifications

Items			Characteristics
Absolute maximum ratings	Drain-source voltage V_DSS (V)		60
	Gate-source voltage V_GSS (V)		±12
	Drain current I_D (A)		0.65
Electrical Characteristics	Drain-source on-resistance R_DS(ON) max (mΩ)	\|V_GS\|=3.0V	2400
		\|V_GS\|=5.0V	1800
	Total gate charge Q_g typ. (nC)		1.5
	Input capacitance C_iss typ. (pF)		43
Package	TSOP6F		2.9mm×2.8mm; t=0.8mm

Equivalent Circuits

Source：http://www.semicon.toshiba.co.jp/eng/