TOKYO - Toshiba Electronic Devices & Storage Corporation (TDSC) today announced the launch of “SSM3K357R,” a new MOSFET that adopts an active-clamp structure with a built-in diode between the drain and gate terminals. The device is suited to driving inductive loads, such as mechanical relays. Volume shipments start today.

The SSM3K357R protects drivers against damage from voltage surges, such as back-EMF caused by inductance. It integrates a pull-down resistor, series resistor and Zener diode, which helps reduce the part count and save on board space.

An industry-standard SOT-23-class package, a low operating voltage of 3.0V and AEC-Q101 qualification make the SSM3K357R suitable for automotive and many other applications.

Applications

>Relay and solenoid control for automotive

>Relay and solenoid control for industry

>Clutch control for OA equipment

Features

>Active clamp structure suitable for driving an inductive load

>Low operating voltage of 3.0 V

>AEC-Q101 qualified

Main Specifications

Items (Ta=25℃)			Characteristics
Absolute maximum ratings	Drain-source voltage VDSS (V)		60
	Gate-source voltage VGSS (V)		±12
	Drain current ID (A)		0.65
Electrical Characteristics	Drain-source on-resistance RDS(ON) max (mΩ)	|VGS|=3.0V	1200
		|VGS|=5.0V	800
	Total gate charge Qg typ. (nC)		1.5
	Input capacitance Ciss typ. (pF)		43
Package	SOT-23F		2.9mm×2.4mm; t=0.8mm

Equivalent Circuit



Source：http://www.semicon.toshiba.co.jp/eng/