Manufacturers
- Abracon
- Adam Tech
- Aerospace, Defense & Marine
- Agastat
- AIC
- AKM Semiconductor
- Alcoswitch
- Allegro
- Alps Electric
- Altera
- AMI Semiconductor
- AMP
- ams
- Analog Devices (ADI)
- Aptina Imaging
- Atmel
- Avago / Broadcom
- AVX
- Axicom
- Bccomponents
- Beyschlag
- BI Technologies
- Bourns Inc.
- Bowei Integrated Circuits
- Bridgelux
- Buchanan
- California Micro Devices
- Catalyst Semiconductor
- CGS
- Cirrus Logic
- Citizen Electronics
- CML Microcircuits
- Coiltronics
- Cooper Bussmann
- Corcom
- Core Logic
- Cree
- CSR PLC
- CTS
- Cypress Semiconductor
- Dale
- Data Image
- Deutsch
- Diodes Incorporated
- DOMINANT Opto Technologies
- E-T-A
- Eaton
- ECS
- Edison Opto
- Elcon
- EPCOS
- Epistar
- Epson
- Everlight Electronics
- Exar
- Fairchild Semiconductor
- FCI
- Freescale Semiconductor
- Fremont Micro Devices (FMD)
- Fujitsu Semiconductor
- Fulltech Electric
- General Semiconductor
- Harvatek
- Holsworthy
- Hsuan Mao Technology
- IDT
- Infineon Technologies
- Innolux
- International Rectifier (IR)
- Intersil
- IRC
- ISSI
- IXYS-IC
- Jing Cheng Electronical
- JL World
- Johanson Dielectrics
- Johanson Technology
- JRC / NJR
- JST
- KEC
- Kilovac
- Kingbright
- Kyocera Industrial Ceramics
- LEDiL
- Linear Technology / ADI
- Lite-On Technology
- Littelfuse
- Lumex
- Lumileds
- Luminary Micro
- Luminus Devices
- Macronix
- Maojwei / ZJPT
- Maxim Integrated
- MCC
- Mean Well Enterprises
- Microchip Technology
- Micron
- Microsemi
- Mini-Circuits
- Molex
- Murata Manufacturing
- Murata Power Solutions
- MWT
- National Semiconductor
- Nichicon
- Nippon Chemi-Con
- NJR / JRC
- NVE
- NXP Semiconductors
- OEG
- Omnivision
- ON Semiconductor
- Optek Technology
- Optrex
- OSRAM Opto Semiconductors
- OTAX
- Panasonic
- Peregrine(pSemi)
- Potter & Brumfield
- Power Integrations
- PowerStor
- Preci-Dip
- Prewell
- Products Unlimited
- Pulse Electronics
- PulseCore Semiconductor
- Qorvo
- Raychem
- Renesas Electronics
- RFMD
- Richtek Technology
- ROHM Semiconductor
- Rubycon
- Samsung Electro-Mechanics
- Samsung Semiconductor
- Schaffner
- Schrack
- Seiko Instruments, Inc. (SII)
- Semtech
- Sensata
- Seoul Semiconductor
- Sfernice
- Sharp Display
- Sharp Microelectronics
- Silicon Labs
- Siliconix
- Skyworks Solutions
- SoniCrest / JL World
- Spansion
- Sprague
- Stanley Electric
- STMicroelectronics
- Sunny Electronics
- Susumu (SSM)
- Taimag
- Taiyo Yuden
- TDK
- TDK-Lambda
- TE Connectivity
- Teccor
- Texas Instruments (TI)
- Thin Film
- Tianma Micro-electronics
- TOCOS
- TOKO
- Toshiba Electronic Components
- TT Electronics
- Tusonix
- TXC
- Tyntek
- Vishay
- Vishay Precision Group
- Vitramon
- Walsin Technology
- Weidmuller
- Welwyn
- Wickmann
- Winbond
- Xilinx
- Yageo
- Zetex Semiconductors
- ZJPT / Maojwei
News
Wolfspeed’s Next Generation GaN HEMTs Deliver Unmatched Efficiency
2017-09-12 | ReturnThe new 28V GaN HEMT devices are developed using Wolfspeed’s proven 0.25µm GaN-on-SiC process, and are designed with the same package footprint as the previous generation of 0.4µm devices, making it possible for RF design engineers to use them as drop-in replacements for the earlier devices in existing designs. Available as both packaged devices (CG2H400 Series) and bare die (CG2H800 Series), the new GaN HEMTs deliver 33% higher frequency operation to 8GHz (from 6GHz), an additional 1.5-2.0dB of gain, as well as a 5-10% boost in operating efficiency compared to Wolfspeed’s earlier generation devices.
“By moving to our proven 0.25µm process for these next-generation devices, we are able to deliver significant performance advantages to a wide range of customers while maintaining the superior reliability these types of applications require,” said Jim Milligan, RF and microwave director, Wolfspeed. “Offering these new devices in the same packages as our previous generation parts enables RF design engineers to quickly and easily boost the performance of their RF amplifiers.”
The higher efficiency (up to 70% at PSAT) and higher bandwidth capability makes these devices ideal for an extensive range of RF power amplifier applications, including those for military communications systems, radar equipment (UHF, L-, S-, C-, and X-band), electronic warfare (EW) and electronic counter-measure (ECM) systems, as well as commercial RF applications in the industrial, medical, and scientific (ISM) band.
The CG2H400 Series include these packaged 28V unmatched GaN HEMT devices:
CG2H40010 – 10W, 8GHz operation with 70% efficiency (at PSAT) and 18dB/16dB small signal gain (at 2.0GHz and 4.0GHz, respectively)
CG2H40025 – 25W, 6GHz operation with 65% efficiency (at PSAT) and 17dB/15dB small signal gain (at 2.0GHz and 4.0GHz, respectively)
CG2H40045 – 45W, 4GHz operation with 60% efficiency (at PSAT) and 18dB/14dB small signal gain (at 2.0GHz and 4.0GHz, respectively)
The CG2H400 Series devices are available in screw-down flanged or solder-down pill packages.
The CG2H800 Series include these bare die 28V unmatched GaN HEMT devices:
CG2H80015 – 15W, 8GHz operation with 65% efficiency (at PSAT) and 17dB/12dB small signal gain (at 4.0GHz and 8.0GHz, respectively)
CG2H80030 – 30W, 8GHz operation with 65% efficiency (at PSAT) and 17dB/12dB small signal gain (at 4.0GHz and 8.0GHz, respectively)
CG2H80060 – 60W, 8GHz operation with 65% efficiency (at PSAT) and 15dB/12dB small signal gain (at 4.0GHz and 8.0GHz, respectively)
Compared to conventional silicon (Si) and gallium arsenide (GaAs) devices, Wolfspeed’s GaN-on-SiC RF devices deliver higher breakdown voltage, higher temperature operation, higher efficiency, higher thermal conductivity, higher power density, and wider bandwidths, all of which are critical for achieving smaller, lighter, and more efficient microwave and RF products. Wolfspeed™ GaN-on-SiC RF devices enable next-generation broadband, public safety, and ISM (industrial, scientific, and medical) amplifiers; broadcast, satellite, and tactical communications amplifiers; UAV data links; cellular infrastructure; test instrumentation; and two-way private radios.
More information about the newly released CG2H400 and CG2H800 devices can be found here.
Attendees of Euopean Microwave 2017 can learn more about these devices as well as the rest of Wolfspeed’s GaN RF portfolio by visiting them at booth #195. For more information about Wolfspeed’s RF products and foundry services, please visit www.wolfspeed.com/rf.
Source:http://www.cree.com/