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News
Peregrine Semiconductor Introduces High-Power Receiver Protection RF Switch
2017-06-06 | ReturnHONOLULU – IMS 2017 – June 6, 2017 – In booth #1042, Peregrine Semiconductor Corp., founder of RF SOI (silicon on insulator) and pioneer of advanced RF solutions, introduces the UltraCMOS® PE42823, a high-power receiver protection RF switch. Ideal for wireless infrastructure applications, this reflective switch is optimized for emerging radio architectures such as massive multiple input, multiple output (MIMO). The PE42823 delivers excellent single-event peak power handling, low power consumption and high linearity. Offered in a compact form factor, this high-power switch features built-in ESD protection—a key benefit for systems that demand high reliability.
Receiver protection switches are used to protect the system when an antenna is disconnected, which can occur at installation, field failure or with unexpected power surges. The PE42823 switch is designed to reliably handle the reflected power and to protect the receiver system from damage. Unlike competing PIN-diode solutions, the PE42823 requires no external RF matching components, resulting in a smaller board size and lower bill of materials (BOM) costs. PIN-diode based high-power switches require different DC bias voltages, and these solutions need several discrete components and a specified driver IC to transfer control logic to these different DC bias voltages.
“Emerging wireless infrastructure systems require intelligent components that reliably deliver low power consumption in a compact form factor,” says Robert Wagner, director of product marketing at Peregrine Semiconductor. “Peregrine’s new PE42823 high-power switch offers a clear power handling and size advantage over competing PIN-diode solutions. Plus, design engineers can confidently trust the reliability and repeatability of Peregrine’s UltraCMOS technology platform.”
Features, Packaging, Price and Availability
Covering a wide frequency range from 700 MHz to 6 GHz, the PE42823 is a reflective single pole, double throw (SPDT) switch designed for use in high-power and high-performance wireless infrastructure applications. The RF protection switch delivers excellent single-event peak power handling of 51 dBm LTE, low power consumption of 120 microamps and exceptional linearity performance across the frequency range. The switch’s input IP3 is 70 dBm, and the input IP2 is 105 dBm. At 2.7 GHz, the switch has high isolation of 43 dB on the receive path and 34 dB on the transmit path. The PE42823 features built-in ESD protection with an ESD rating of 4.5 kV HBM on RF pins to ground. In addition, it has an extended operating temperature of +105 degrees Celsius.
Offered in a compact 16-lead, 3 x 3 x 0.75 mm QFN package, volume-production parts and evaluation kits are now available. For 10K-quantity orders, each PE42823 switch is $5.43.
Source:http://www.psemi.com