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News
Toshiba Launches Smart Gate Driver Photocoupler with Improved Desaturation Sensing Function
2017-05-18 | ReturnTLP5214A newly integrates such features as desaturation leading edge blanking time, filtering time, and optimization of soft turn-off performance. These contribute to secure execution of applications by suppressing short-time pulse noise during switching and desaturation sensing.
The latest Gartner market report recognizes Toshiba as the leading manufacturer of optocouplers by sales in 2015 and 2016, with 23% of sale-based market share in CY2016. (Source: Gartner "Market Share: Semiconductor Devices and Applications Worldwide 2016" 30 March, 2016)
Toshiba will continue to deliver products that meet the needs of customers by promoting the development of a diverse portfolio of photocouplers and photorelays tailored to market trends.
Applications
。IGBT/MOSFET drive
。Industrial inverters
。Inverters for solar energy
。Servo amplifiers
。Air conditioner inverters
New Features
。DESAT leading edge blanking time: 1.1μs (typical)
。DESAT filter time: 90ns (typical)
。Soft turn-off time (tDESAT(10%))**: 7μs (typical) Current item[1]: 3.5μs (typical)
**Under condition of Cg = 25nF
Main Specifications
(Unless otherwise specified, Ta = -40 to 110℃. All typical values are at Ta = 25℃)
Part number | TLP5214A | |
---|---|---|
Electrical characteristics | Peak output current | ±4.0 A (Max.) |
Supply voltage | 15 to 30 V | |
Supply current | 3.8 mA (Max.) | |
Threshold input current | 6 mA (Max.) | |
Switching characteristics | Propagation delay time | 150 ns (Max.) |
Propagation delay skew | -80 to 80 ns | |
Protection function | IGBT desaturation detection | DESAT threshold voltage: 6.5 V (typ.) |
DESAT leading edge blanking time: 1.1 μs (typ.) | ||
DESAT filter time: 90 ns (typ.) | ||
Soft turn-off | DESAT sense to 10% delay time: 7 μs (typ.) *Cg = 25 nF | |
DESAT sense to 10% delay time: 3.5 μs (typ.) *Cg = 10 nF | ||
Miller clamp (off) | Clamp pin threshold voltage: 2.5 V (typ.) | |
Undervoltage lockout (UVLO) | VUVLO+: 11.6 V (typ.) | |
VUVLO-: 10.3 V (typ.) | ||
Isolation characteristics (@Ta = 25 ℃) |
Isolation voltage | 5000 Vrms (Min.) |
Clearance distance | 8.0 mm (Min.) | |
Creepage distance | 8.0 mm (Min.) | |
Isolation thickness | 0.4 mm (Min.) |
Source:http://www.semicon.toshiba.co.jp/eng/