Manufacturers
- Abracon
- Adam Tech
- Aerospace, Defense & Marine
- Agastat
- AIC
- AKM Semiconductor
- Alcoswitch
- Allegro
- Alps Electric
- Altera
- AMI Semiconductor
- AMP
- ams
- Analog Devices (ADI)
- Aptina Imaging
- Atmel
- Avago / Broadcom
- AVX
- Axicom
- Bccomponents
- Beyschlag
- BI Technologies
- Bourns Inc.
- Bowei Integrated Circuits
- Bridgelux
- Buchanan
- California Micro Devices
- Catalyst Semiconductor
- CGS
- Cirrus Logic
- Citizen Electronics
- CML Microcircuits
- Coiltronics
- Cooper Bussmann
- Corcom
- Core Logic
- Cree
- CSR PLC
- CTS
- Cypress Semiconductor
- Dale
- Data Image
- Deutsch
- Diodes Incorporated
- DOMINANT Opto Technologies
- E-T-A
- Eaton
- ECS
- Edison Opto
- Elcon
- EPCOS
- Epistar
- Epson
- Everlight Electronics
- Exar
- Fairchild Semiconductor
- FCI
- Freescale Semiconductor
- Fremont Micro Devices (FMD)
- Fujitsu Semiconductor
- Fulltech Electric
- General Semiconductor
- Harvatek
- Holsworthy
- Hsuan Mao Technology
- IDT
- Infineon Technologies
- Innolux
- International Rectifier (IR)
- Intersil
- IRC
- ISSI
- IXYS-IC
- Jing Cheng Electronical
- JL World
- Johanson Dielectrics
- Johanson Technology
- JRC / NJR
- JST
- KEC
- Kilovac
- Kingbright
- Kyocera Industrial Ceramics
- LEDiL
- Linear Technology / ADI
- Lite-On Technology
- Littelfuse
- Lumex
- Lumileds
- Luminary Micro
- Luminus Devices
- Macronix
- Maojwei / ZJPT
- Maxim Integrated
- MCC
- Mean Well Enterprises
- Microchip Technology
- Micron
- Microsemi
- Mini-Circuits
- Molex
- Murata Manufacturing
- Murata Power Solutions
- MWT
- National Semiconductor
- Nichicon
- Nippon Chemi-Con
- NJR / JRC
- NVE
- NXP Semiconductors
- OEG
- Omnivision
- ON Semiconductor
- Optek Technology
- Optrex
- OSRAM Opto Semiconductors
- OTAX
- Panasonic
- Peregrine(pSemi)
- Potter & Brumfield
- Power Integrations
- PowerStor
- Preci-Dip
- Prewell
- Products Unlimited
- Pulse Electronics
- PulseCore Semiconductor
- Qorvo
- Raychem
- Renesas Electronics
- RFMD
- Richtek Technology
- ROHM Semiconductor
- Rubycon
- Samsung Electro-Mechanics
- Samsung Semiconductor
- Schaffner
- Schrack
- Seiko Instruments, Inc. (SII)
- Semtech
- Sensata
- Seoul Semiconductor
- Sfernice
- Sharp Display
- Sharp Microelectronics
- Silicon Labs
- Siliconix
- Skyworks Solutions
- SoniCrest / JL World
- Spansion
- Sprague
- Stanley Electric
- STMicroelectronics
- Sunny Electronics
- Susumu (SSM)
- Taimag
- Taiyo Yuden
- TDK
- TDK-Lambda
- TE Connectivity
- Teccor
- Texas Instruments (TI)
- Thin Film
- Tianma Micro-electronics
- TOCOS
- TOKO
- Toshiba Electronic Components
- TT Electronics
- Tusonix
- TXC
- Tyntek
- Vishay
- Vishay Precision Group
- Vitramon
- Walsin Technology
- Weidmuller
- Welwyn
- Wickmann
- Winbond
- Xilinx
- Yageo
- Zetex Semiconductors
- ZJPT / Maojwei
News
Wolfspeed Achieves Industry’s First All- SiC 1.2kV power Module Reliability Benchmark for Harsh Environment Operation
2017-05-16 | ReturnThis reliability benchmark enables system designers to use this device in outdoor applications such as transportation, wind, solar and other renewables where extreme environmental conditions have historically challenged safe device operation. The new all-SiC module, rated for 300 A and 1.2 kV blocking, was stressed in an 85 percent relative humidity, 85°C ambient while biased at 80 percent of rated voltage (960V). Success in harsh environment testing under bias provides further confidence in the overall ruggedness of SiC device technology for all applications.
“SiC components enable the design of compact, lightweight, low–loss converters required for railway transport applications,” said Michel Piton, semiconductor master expert at Alstom, a leading global supplier of systems, equipments and services for the railway market. “Achieving March 2017 the benchmark for temperature and humidity under high bias voltage is a key milestone for SiC devices in its adoption into our demanding market.”
Powered by new Wolfspeed™ MOSFETs (CPM2-1200-0025A) and Gen5 Schottky diodes that also pass the harsh environment test at the die level, the new module retains the low 4.2 mΩ on-resistance and more than five times lower switching losses than similarly rated, latest generation IGBT modules. Module construction utilizes high thermal conductivity aluminum nitride substrates and optimized assembly methods to meet industry thermal and power cycling requirements.
“This device is yet another industry-first driven by Wolfspeed,” said John Palmour, Wolfspeed's chief technology officer. “The latest 1200V module demonstrates our commitment to enabling markets and applications by meeting the anticipated system requirements for 2020 and beyond.”
Available under part number WAS300M12BM2, the new module can be driven using existing Wolfspeed™ gate drivers for 62mm modules. Please visit http://www.wolfspeed.com/ for more information and part availability. Attendees of PCIM 2017 can learn more about the new module at Hall 9, Booth 242. For all other inquiries about Wolfspeed power products, please visit http://www.wolfspeed.com/power/products
About Wolfspeed
Wolfspeed, A Cree Company, is leading the innovation and commercialization of silicon carbide and gallium nitride, liberating designers to invent power and wireless systems for a responsible, energy-efficient future.
Wolfspeed's wide bandgap semiconductor products for power and radio-frequency (RF) applications deliver new levels of performance through increased efficiency, higher switching frequency and reduced system size and weight for the transportation, industrial, energy and communications markets.
Please refer to http://www.wolfspeed.com/ for additional product and company information.
Source:http://www.cree.com/